N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

50A,60V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 50A ,RDS(ON) = 22mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-Channel MOSFET uses advanced trench technology

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 55A ,RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET

文件：812.59 Kbytes Page：10 Pages

50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.72 Kbytes Page：10 Pages

50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.77 Kbytes Page：10 Pages