位置：首页 > IC中文资料第8603页 > CEP35P03
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP35P03 | P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 |   | |
CEP35P03 | P-Channel Enhancement Mode Field Effect Transistor | CET 华瑞 | | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
丝印代码：HM35P03；P-Channel Enhancement Mode Power MOSFET 文件：1.37951 Mbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
丝印代码：HM35P03D；P-Channel Enhancement Mode Power MOSFET 文件：1.21556 Mbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
丝印代码：35P03；P-Ch Enhancement Mode Power MOSFET 文件：364.97 Kbytes Page：4 Pages | SECOS 喜可士 | |
CEP35P03产品属性
- 类型
描述
- 型号
CEP35P03
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
P-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
05+ |
TO-220 |
8008 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ROHM |
26+ |
标准封装 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
CET |
26+ |
SMD1825 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO2203 |
6734 |
||||
CET |
06+ |
TO-220 |
2010 |
全新 发货1-2天 |
|||
CET/華瑞 |
24+ |
TO220 |
39197 |
郑重承诺只做原装进口现货 |
|||
ROHM |
23+ |
TO220 |
5000 |
原装正品,假一罚十 |
|||
AD |
25+ |
TO220/3 |
3000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
|||
JD/晶导 |
23+ |
SMAF |
69820 |
终端可以免费供样,支持BOM配单! |
CEP35P03规格书下载地址
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DdatasheetPDF页码索引
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