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型号 功能描述 生产厂家 企业 LOGO 操作
CEP20N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

CEP20N06

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件:417.98 Kbytes Page:4 Pages

CET

华瑞

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

MOTOROLA

摩托罗拉

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

N-channel TrenchMOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Very low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters.

PHILIPS

飞利浦

CEP20N06产品属性

  • 类型

    描述

  • 型号

    CEP20N06

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-5-13 19:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
01+
TO-220
7000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
CET
26+
DIP-14
890000
一级总代理商原厂原装大批量现货 一站式服务
CET/華瑞
25+
NA
880000
明嘉莱只做原装正品现货
CET
18+
TO-220
85600
保证进口原装可开17%增值税发票
CET
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
CET
24+
TO2203
648
CET/華瑞
23+
TO-220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
VBsemi
25+
TO220
11000
原装正品 有挂有货 假一赔十
CET
08+
TO-220
144
全新 发货1-2天

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