位置：首页 > IC中文资料第9974页 > CEP13N10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP13N10 | N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   |
CEP13N10 | N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=185mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor 文件：354.05 Kbytes Page：4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel100-V(D-S)MOSFET 文件：773.51 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor 文件：354.05 Kbytes Page：4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
CEP13N10产品属性
- 类型
描述
- 型号
CEP13N10
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
CET |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
CET/華瑞 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
CET/華瑞 |
20+ |
TO-220 |
300000 |
现货很近!原厂很远!只做原装 |
|||
CET(华瑞) |
2112+ |
TO-220(TO-220-3) |
115000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET |
TO-220 |
68900 |
原包原标签100%进口原装常备现货! |
||||
CET |
24+ |
TO-220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
CET/華瑞 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
CET |
21+ |
TO-220 |
5100 |
原装现货假一赔十 |
|||
CET/華瑞 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
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