N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP03N8 800V 4.8Ω 3A 10V CEF03N8 800V 4.8Ω 3A 10V CEB03N8 800V 4.8Ω 3A 10V ​​​​​​​ ■ Super high dense cell design for extremely low RDS(ON). ■ High power and curre

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 800V, 2.5A, RDS(ON) = 4.8Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.6 mΩ typ. (at VGS = 8.0 V) • Pb-free • Halogen-free