P-ChannelEnhancementModeMOSFET

FEATURES ■-30V,-5.3A,RDS(ON)=50mΩ@VGS=-10V. ​​​​​​​RDS(ON)=90mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

P-ChannelEnhancementModeFieldEffectTransistor

文件：373.22 Kbytes Page：4 Pages

P-ChannelEnhancementModePowerMOSFET

DESCRIPTION The9435usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. GENERALFEATURES ●VDS=-30V,ID=-5.1A RDS(ON)

SOP-8Plastic-EncapsulateMOSFETS

Description The9435usesadvancedtrenchtechnologytoprovide excellentRDS,lowgatechargeandoperationwithgate voltagesaslowas4.5V. GeneralFeatures VDS=-30V RDS

MACHINESCREWPANPHILLIPS10-32

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20VP-ChannelIncreasedMOSFET

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P-Channel30-V(D-S)MOSFET

文件：972.94 Kbytes Page：8 Pages