N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.3A , RDS(ON) = 60mW @VGS = 10V. RDS(ON) = 74mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance 2SK2361: RDS (on) = 0.9 Ω MAX. (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω MAX. (VGS = 10

SWITCH-MODE TRANSFORMER GUIDE

CONSUMER PRODUCTS Pulse offers a complete range of Switch-Mode Transformers in various technologies (slot, layer and triple insulation wire) used for power supplies in television, set-top boxes, satellite receivers, DVD players, telephone chargers, and white goods. Pulse also offers a new range o

Nylon Hose Clamps

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2A 550k/1.1MHz Synchronous PWM/PSM

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N-Channel 60-V (D-S) MOSFET

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