Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6A, RDS(ON) = 25mW @VGS = 4.5V. RDS(ON) = 35mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. Lead free product is acquired.

N Channel MOSFET

Dual N-Channel Enhancement Mode Field Effect Transistor

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LOW-DROPOUT REGULATORS . HIGH EFFICIENCY

Designed specifically to meet the requirement for extended operation of battery-powered equipment such as cordless and cellular telephones, the A8205SLH voltage regulators offer the reduced dropout voltage and quiescent current essential for maximum battery life. Applicable also to palmtop compute

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

Electronic, 2 C #20 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 2 Conductor 20AWG (7x28) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

Dual N-Channel 25-V (D-S) MOSFET

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20V N-Channel Enhancement MOS FET

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