N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,2.0A,RDS(ON)=5.0Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.

Single-EndedCordsets

Basicfeatures Approval/Conformity CE EAC WEEE

InductiveSensors

BESM08EH1-PSC20B-S04G-S01 Basicfeatures AdditionalfeaturesHousingresistanttoweldspatter Approval/ConformityCE UKCA cULus WEEE BasicstandardIEC60947-5-2

N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ​​​​​​​■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

N-ChannelEnhancementModeFieldEffectTransistor

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