型号 功能描述 生产厂家 企业 LOGO 操作
BES02N6

Inductive Sensors

BES M08EH1-PSC20B-S04G-S01 Basic features Additional features Housing resistant to weld spatter Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2

Balluff

巴鲁夫

Single-Ended Cordsets

Basic features Approval/Conformity CE EAC WEEE

Balluff

巴鲁夫

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件:132.65 Kbytes Page:4 Pages

CET

华瑞

更新时间:2025-12-30 10:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
N/A
80000
一级代理-主营优势-实惠价格-不悔选择
BES
2450+
BGA
6540
只做原装正品假一赔十为客户做到零风险!!
BES
25+
BGA
15000
全新原装现货,价格优势
SAMSUNG
1922+
NA
35689
原装进口现货库存专业工厂研究所配单供货
BORN
22+
DFN2×2-3L
20000
原装正品假一罚十,代理渠道价格优
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
BES
23+
QFN
50000
只做原装正品
BES
23+
QFN
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
BESTRELY
24+
BGA
9000
只做原装正品 有挂有货 假一赔十
APPLIED MATERIALS (AMAT)
25+
80
公司优势库存 热卖中!

BES02N6数据表相关新闻