型号 功能描述 生产厂家 企业 LOGO 操作
CEB20N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

CEB20N06

N-Channel Enhancement Mode Field Effect Transistor

文件:417.98 Kbytes Page:4 Pages

CET

华瑞

CEB20N06

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

MOTOROLA

摩托罗拉

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

N-channel TrenchMOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Very low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters.

PHILIPS

飞利浦

CEB20N06产品属性

  • 类型

    描述

  • 型号

    CEB20N06

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-3-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
2026+
TO-263
1616
原装正品,假一罚十!
太友
24+
N/A
18766
公司现货库存,支持实单
CET/華瑞
2511
TO-263
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
SR
23+
T0-263
5000
原装正品,假一罚十
NCE/新洁能
23+
TSSOP-8
69820
终端可以免费供样,支持BOM配单!
CET
23+
TO-263
7300
专注配单,只做原装进口现货
ADI
23+
N/A
7000
CET
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
CET
23+
TO-263
12800
公司只有原装 欢迎来电咨询。
CET
04+
TO-263
9
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