N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n60V, 28A, RDS(ON) = 40mΩ @VGS = 10V.\n             RDS(ON) = 50mΩ @VGS = 4.5V.\nSuper high dense cell design for extremely low RDS(ON).\nHigh power and current handing capability.\nTO-220 & TO-263 package.\nLead free product is acquired. 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V.\n             RDS(ON) = 50mΩ @VGS = 4.5V.\nSuper high dense cell design for extremely low RDS(ON).\nHigh power and current handing capability.\nTO-220 & TO-263 package.\nLead free product is acquired.;

N-Channel Enhancement Mode Field Effect Transistor

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TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

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TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

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TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

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TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

N-channel TrenchMOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Very low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters.