| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEB13N10L | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 |   | |
CEB13N10L | N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. RDS(ON) = 185mW @VGS = 5V. | CET-MOS 华瑞 | | |
CEB13N10L | N Channel MOSFET | CET 华瑞 | | |
100V LOGIC N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a | FAIRCHILD 仙童半导体 | | ||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | | ||
100V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | | ||
100V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | |
CEB13N10L产品属性
- 类型
描述
- BVDSS(V)：
100
- Rds(on)mΩ@10V：
175
- Rds(on)mΩ@5V：
185
- ID(A)：
12.8
- Qg(nC)@10V(typ)：
12
- RθJC(℃/W)：
2.3
- Pd(W)：
65
- Configuration：
Single
- Polarity：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JD/晶导 |
23+ |
SMC(DO-214AB) |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
CET |
24+ |
50000 |
|||||
AMPHENOL/安费诺 |
2608+ |
/ |
287692 |
一级代理，原装现货 |
|||
CET |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
SR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
CET |
25+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
|||
AMPHENOL/安费诺 |
26+ |
NA |
360000 |
只做原装 |
|||
CET |
23+ |
TO-263 |
7300 |
专注配单,只做原装进口现货 |
|||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
CEB13N10L芯片相关品牌
CEB13N10L规格书下载地址
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2019-11-25
DdatasheetPDF页码索引
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