CURRENT REGULATOR DIODES

• CURRENT REGULATOR DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • METALLURGICALLY BONDED

CURRENT REGULATOR DIODES

• CURRENT REGULATOR DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • METALLURGICALLY BONDED

封装/外壳：DO-213AB，MELF（玻璃） 包装：散装 描述：ZENER DIODE 分立半导体产品 电流调节 - 二极管，晶体管

封装/外壳：DO-213AB，MELF（玻璃） 包装：散装 描述：CURRENT REGULATOR 分立半导体产品 电流调节 - 二极管，晶体管

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)