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型号	功能描述	生产厂家企业	LOGO
CDB5012	Evaluation Board 文件：86.43 Kbytes Page：7 Pages	CIRRUS 凌云逻辑	CIRRUS
CDB5012A	Evaluation Board 文件：86.43 Kbytes Page：7 Pages	CIRRUS 凌云逻辑	CIRRUS
APT5012	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast	ADPOW	ADPOW
APT5012	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT5012JN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT5012WVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast	ADPOW	ADPOW
NTE5012A	Zener Diode, 1/2 Watt 짹5 Tolerance Features: ● Zener Voltage 2.4 to 200V ● DO35 Package	NTE	NTE

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