丝印代码：CD74HC27E；CDx4HC27 Triple 3-Input NOR Gates

1 Features • Buffered inputs • Wide operating voltage range: 2 V to 6 V • Wide operating temperature range: –55°C to +125°C • Supports fanout up to 10 LSTTL loads • Significant power reduction compared to LSTTL logic ICs 2 Applications • Alarm / tamper detect circuit • S-R latch 3 D

丝印代码：CD74HC27E；CDx4HC27 Triple 3-Input NOR Gates

1 Features • Buffered inputs • Wide operating voltage range: 2 V to 6 V • Wide operating temperature range: –55°C to +125°C • Supports fanout up to 10 LSTTL loads • Significant power reduction compared to LSTTL logic ICs 2 Applications • Alarm / tamper detect circuit • S-R latch 3 D

Triple 3-input NOR gate

GENERAL DESCRIPTION The 74HC/HCT27 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT27 provide the 3-input NOR function. FEATURES • Output capability: standard • ICC categor

Triple 3-input NOR gate

GENERAL DESCRIPTION The 74HC/HCT27 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT27 provide the 3-input NOR function. FEATURES • Output capability: standard • ICC categor

Triple 3-input NOR gate

GENERAL DESCRIPTION The 74HC/HCT27 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT27 provide the 3-input NOR function. FEATURES • Output capability: standard • ICC categor

TRIPLE 3-INPUT NOR GATE

DESCRIPTION The M54/74HC27 is a high speed CMOS TRIPLE 3-INPUT NOR GATE fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 7 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUT

TRIPLE 3-INPUT NOR GATE

DESCRIPTION The M74HC27 is an high speed CMOS TRIPLE 3-INPUT NOR GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 9ns (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETR