CD74ACT10价格

参考价格:¥1.4699

型号:CD74ACT109E 品牌:TI 备注:这里有CD74ACT10多少钱,2025年最近7天走势,今日出价,今日竞价,CD74ACT10批发/采购报价,CD74ACT10行情走势销售排行榜,CD74ACT10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CD74ACT10

TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

CD74ACT10

具有 TTL 兼容型 CMOS 输入的 3 通道、3 输入、4.5V 至 5.5V 与非门

TI

德州仪器

CD74ACT10

Triple 3-Input NAND Gate

文件:29.45 Kbytes Page:5 Pages

TI

德州仪器

CD74ACT10

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件:806.69 Kbytes Page:12 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件:806.69 Kbytes Page:12 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:349.71 Kbytes Page:11 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:337.77 Kbytes Page:10 Pages

TI

德州仪器

Dual j-k Flip-Flop with Set and Reset

文件:228.31 Kbytes Page:8 Pages

TI

德州仪器

具有设置和复位端的双路正边沿触发式 J-K 触发器

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:337.77 Kbytes Page:10 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:349.71 Kbytes Page:11 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:337.77 Kbytes Page:10 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:349.71 Kbytes Page:11 Pages

TI

德州仪器

封装/外壳:16-DIP(0.300",7.62mm) 功能:设置(预设)和复位 包装:卷带(TR) 描述:IC FF JK TYPE DUAL 1BIT 16DIP 集成电路(IC) 触发器

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:349.71 Kbytes Page:11 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:337.77 Kbytes Page:10 Pages

TI

德州仪器

封装/外壳:16-SOIC(0.154",3.90mm 宽) 功能:设置(预设)和复位 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC FF JK TYPE DUAL 1BIT 16SOIC 集成电路(IC) 触发器

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:337.77 Kbytes Page:10 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:349.71 Kbytes Page:11 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:349.71 Kbytes Page:11 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:337.77 Kbytes Page:10 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:349.71 Kbytes Page:11 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:349.71 Kbytes Page:11 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:337.77 Kbytes Page:10 Pages

TI

德州仪器

DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

文件:349.71 Kbytes Page:11 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件:806.69 Kbytes Page:12 Pages

TI

德州仪器

Triple 3-Input NAND Gate

文件:29.45 Kbytes Page:5 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件:806.69 Kbytes Page:12 Pages

TI

德州仪器

Triple 3-Input NAND Gate

文件:29.45 Kbytes Page:5 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件:806.69 Kbytes Page:12 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件:806.69 Kbytes Page:12 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件:806.69 Kbytes Page:12 Pages

TI

德州仪器

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件:806.69 Kbytes Page:12 Pages

TI

德州仪器

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

STMICROELECTRONICS

意法半导体

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

STMICROELECTRONICS

意法半导体

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

STMICROELECTRONICS

意法半导体

Triple 3-Input NAND Gate

General Description The AC/ACT10 contains three, 3-input NAND gates. Features ■ ICC reduced by 50 on 74AC only ■ Outputs source/sink 24mA

Fairchild

仙童半导体

Triple 3-Input NAND Gate

文件:102.64 Kbytes Page:7 Pages

Fairchild

仙童半导体

CD74ACT10产品属性

  • 类型

    描述

  • 型号

    CD74ACT10

  • 制造商

    TI

  • 制造商全称

    Texas Instruments

  • 功能描述

    Triple 3-Input NAND Gate

更新时间:2025-11-23 11:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
24+
SOP-16
6000
全新原装深圳仓库现货有单必成
TI/德州仪器
25+
原厂封装
10280
TI/德州仪器
24+
SOIC-16
9600
原装现货,优势供应,支持实单!
RCA
23+
DIP-14
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
TI/德州仪器
23+
SOP-16
12700
买原装认准中赛美
TI
三年内
1983
只做原装正品
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
Harris
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
RCA
23+
DIP-14
50000
全新原装正品现货,支持订货
HARRIS
24+
SOP-143.9mm
159

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