TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

Triple 3-Input NAND Gate

文件：29.45 Kbytes Page：5 Pages

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件：806.69 Kbytes Page：12 Pages

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 3CH 3-INP 14SOIC 集成电路（IC） 门和反相器

TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件：806.69 Kbytes Page：12 Pages

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件：806.69 Kbytes Page：12 Pages

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE NAND 3CH 3-INP 14SOIC 集成电路（IC） 门和反相器

TRIPLE 3-INPUT POSITIVE-NAND GATES

文件：806.69 Kbytes Page：12 Pages

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

Triple 3-Input NAND Gate

General Description The AC/ACT10 contains three, 3-input NAND gates. Features ■ ICC reduced by 50 on 74AC only ■ Outputs source/sink 24mA

Triple 3-Input NAND Gate

文件：102.64 Kbytes Page：7 Pages