TRIPLE 3-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

Triple 3-Input NAND Gate

General Description The AC/ACT10 contains three, 3-input NAND gates. Features ■ ICC reduced by 50 on 74AC only ■ Outputs source/sink 24mA

Triple 3-Input NAND Gate

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