CD4011UB价格
参考价格:¥0.9678
型号:CD4011UBE 品牌:TI 备注:这里有CD4011UB多少钱,2026年最近7天走势,今日出价,今日竞价,CD4011UB批发/采购报价,CD4011UB行情走势销售排行榜,CD4011UB报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:CD4011UB;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CD4011UB;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
CD4011UB | CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | ||
CD4011UB | 4 通道、2 输入、3V 至 18V 与非门 CD4011UB quad 2-input NAND gate provides the system designer with direct implementation of the NAND function andsupplements the existing family of CMOS gates.\n\n The CD4011UB types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead dual-in-lineplastic packages (E s • Propagation delay time = 30 ns (typ). at CL = 50 pF, VDD = 10 V\n• 100% tested for quiescent current at 20V\n• 5-V, 10-V, and 15-V parametric ratings\n• Meets all requirements of JEDEC Tentative Standard No. 13B \"Standard Specifications for Description of ’B’ Series CMOS Devices\"\n Data she; | TI 德州仪器 | ||
CD4011UB | CMOS QUAD 2-INPUT NAND GATE 文件:200.97 Kbytes Page:4 Pages | TI 德州仪器 | ||
CD4011UB | CMOS QUAD 2-INPUT NAND GATE 文件:922.77 Kbytes Page:15 Pages | TI 德州仪器 | ||
CD4011UB | CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | ||
丝印代码:CD4011UBE;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CD4011UBE;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CD4011UBE;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CD4011UBF;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CD4011UBF;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CD4011UBM;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CD4011UBM;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CD4011UBM;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CD4011UBM;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
军用 4 通道、2 输入、3V 至 18V 与非门 CD4011UB quad 2-input NAND gate provides the system designer with direct implementation of the NAND function andsupplements the existing family of CMOS gates.\n\n The CD4011UB types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead dual-in-lineplastic packages (E s • Propagation delay time = 30 ns (typ). at CL = 50 pF, VDD = 10 V\n• 100% tested for quiescent current at 20V\n• 5-V, 10-V, and 15-V parametric ratings\n• Meets all requirements of JEDEC Tentative Standard No. 13B \"Standard Specifications for Description of ’B’ Series CMOS Devices\"\n Data she; | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CM011UB;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
丝印代码:CM011UB;CMOS Quad 2-Input NAND Gate Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS QUAD 2-INPUT NAND GATE 文件:922.77 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
封装/外壳:14-DIP(0.300",7.62mm) 包装:卷带(TR) 描述:IC GATE NAND 4CH 2-INP 14DIP 集成电路(IC) 门和反相器 | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:922.77 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:913.22 Kbytes Page:15 Pages | TI 德州仪器 | |||
封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器 | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:922.77 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:913.22 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:922.77 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:913.22 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:922.77 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:913.22 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:922.77 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-Input NAND Gate 文件:913.22 Kbytes Page:15 Pages | TI 德州仪器 | |||
CMOS Quad 2-input NAND Gate 文件:931.97 Kbytes Page:15 Pages | TI 德州仪器 | |||
Quad 2-Input NOR,NAND Buffered B Series Gate 文件:167.6 Kbytes Page:6 Pages | NSC 国半 | |||
Quad 2-Input NOR,NAND Buffered B Series Gate 文件:167.6 Kbytes Page:6 Pages | NSC 国半 | |||
Quad 2-Input NOR,NAND Buffered B Series Gate 文件:167.6 Kbytes Page:6 Pages | NSC 国半 | |||
Quad 2-Input NOR,NAND Buffered B Series Gate 文件:167.6 Kbytes Page:6 Pages | NSC 国半 | |||
Quad 2-Input NOR,NAND Buffered B Series Gate 文件:167.6 Kbytes Page:6 Pages | NSC 国半 |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Quad 2-input NAND gate | ROHM 罗姆 | ROHM | ||
High Voltage CMOS Logic ICs | ROHM 罗姆 | ROHM | ||
High Voltage CMOS Logic ICs | ROHM 罗姆 | ROHM | ||
CMOS NAND GATES | TI 德州仪器 | TI | ||
Quad 2-Input NOR(NAND) Buffered B Series Gate | NSC 国半 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSC 国半 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSC 国半 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSC 国半 | NSC | ||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
CMOS NAND GATES | TI 德州仪器 | TI | ||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | ||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | ||
CMOS NAND GATES | TI 德州仪器 | TI | ||
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
NAND GATES | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Quadruple 2-input NAND Gate | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Quadruple 2-input NAND gate | PHILIPS 飞利浦 | PHILIPS | ||
Quadruple 2-input NAND gate | PHILIPS 飞利浦 | PHILIPS | ||
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | MOTOROLA 摩托罗拉 | MOTOROLA | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
B−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | MOTOROLA 摩托罗拉 | MOTOROLA | ||
B-Suffix Series CMOS Gates | MOTOROLA 摩托罗拉 | MOTOROLA | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | ||
INPUT NAND GATE | RANDE | RANDE | ||
Quad 2 Input NAND Gate | TOSHIBA 东芝 | TOSHIBA | ||
C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | TOSHIBA 东芝 | TOSHIBA | ||
QUAD 2 INPUT NAND GATE | TOSHIBA 东芝 | TOSHIBA |
CD4011UB产品属性
- 类型
描述
- Supply voltage (Min) (V):
3
- Supply voltage (Max) (V):
18
- Number of channels (#):
4
- Inputs per channel:
2
- IOL (Max) (mA):
6.8
- IOH (Max) (mA):
-6.8
- Input type:
Standard CMOS
- Output type:
Push-Pull
- Features:
High speed (tpd 10- 50ns)
- Data rate (Max) (Mbps):
8
- Rating:
Catalog
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
CDIP-14 |
7734 |
样件支持,可原厂排单订货! |
|||
TI |
25+ |
CDIP-14 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Sancon |
23+ |
DIP |
20000 |
全新原装假一赔十 |
|||
TI/德州仪器 |
24+ |
CDIP |
1500 |
只供应原装正品 欢迎询价 |
|||
TI |
20+ |
N/A |
3600 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
陶瓷 |
25+ |
CDIP-14 |
880000 |
明嘉莱只做原装正品现货 |
|||
TI |
22+ |
5000 |
只做原装鄙视假货15118075546 |
||||
Harris Corporation |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
24+ |
DIP |
25 |
|||||
TI/德州仪器 |
QQ咨询 |
DIP |
1200 |
全新原装 研究所指定供货商 |
CD4011UB规格书下载地址
CD4011UB参数引脚图相关
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CD4011UB数据表相关新闻
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