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CD4011UB价格

参考价格:¥0.9678

型号:CD4011UBE 品牌:TI 备注:这里有CD4011UB多少钱,2026年最近7天走势,今日出价,今日竞价,CD4011UB批发/采购报价,CD4011UB行情走势销售排行榜,CD4011UB报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:CD4011UB;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CD4011UB;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

CD4011UB

CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

CD4011UB

4 通道、2 输入、3V 至 18V 与非门

CD4011UB quad 2-input NAND gate provides the system designer with direct implementation of the NAND function andsupplements the existing family of CMOS gates.\n\n The CD4011UB types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead dual-in-lineplastic packages (E s • Propagation delay time = 30 ns (typ). at CL = 50 pF, VDD = 10 V\n• 100% tested for quiescent current at 20V\n• 5-V, 10-V, and 15-V parametric ratings\n• Meets all requirements of JEDEC Tentative Standard No. 13B \"Standard Specifications for Description of ’B’ Series CMOS Devices\"\n Data she;

TI

德州仪器

CD4011UB

CMOS QUAD 2-INPUT NAND GATE

文件:200.97 Kbytes Page:4 Pages

TI

德州仪器

CD4011UB

CMOS QUAD 2-INPUT NAND GATE

文件:922.77 Kbytes Page:15 Pages

TI

德州仪器

CD4011UB

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

丝印代码:CD4011UBE;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CD4011UBE;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CD4011UBE;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CD4011UBF;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CD4011UBF;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CD4011UBM;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CD4011UBM;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CD4011UBM;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CD4011UBM;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

军用 4 通道、2 输入、3V 至 18V 与非门

CD4011UB quad 2-input NAND gate provides the system designer with direct implementation of the NAND function andsupplements the existing family of CMOS gates.\n\n The CD4011UB types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead dual-in-lineplastic packages (E s • Propagation delay time = 30 ns (typ). at CL = 50 pF, VDD = 10 V\n• 100% tested for quiescent current at 20V\n• 5-V, 10-V, and 15-V parametric ratings\n• Meets all requirements of JEDEC Tentative Standard No. 13B \"Standard Specifications for Description of ’B’ Series CMOS Devices\"\n Data she;

TI

德州仪器

CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CM011UB;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

丝印代码:CM011UB;CMOS Quad 2-Input NAND Gate

Features: Propagation delay time = 30 ns (typ). at CL=50pF, Vpp=10V Standardized symmetrical output characteristics = 100% tested for quiescent current at 20V Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 5.V, 10-V, and 15-V p

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS QUAD 2-INPUT NAND GATE

文件:922.77 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

封装/外壳:14-DIP(0.300",7.62mm) 包装:卷带(TR) 描述:IC GATE NAND 4CH 2-INP 14DIP 集成电路(IC) 门和反相器

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:922.77 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:913.22 Kbytes Page:15 Pages

TI

德州仪器

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:922.77 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:913.22 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:922.77 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:913.22 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:922.77 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:913.22 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:922.77 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-Input NAND Gate

文件:913.22 Kbytes Page:15 Pages

TI

德州仪器

CMOS Quad 2-input NAND Gate

文件:931.97 Kbytes Page:15 Pages

TI

德州仪器

Quad 2-Input NOR,NAND Buffered B Series Gate

文件:167.6 Kbytes Page:6 Pages

NSC

国半

Quad 2-Input NOR,NAND Buffered B Series Gate

文件:167.6 Kbytes Page:6 Pages

NSC

国半

Quad 2-Input NOR,NAND Buffered B Series Gate

文件:167.6 Kbytes Page:6 Pages

NSC

国半

Quad 2-Input NOR,NAND Buffered B Series Gate

文件:167.6 Kbytes Page:6 Pages

NSC

国半

Quad 2-Input NOR,NAND Buffered B Series Gate

文件:167.6 Kbytes Page:6 Pages

NSC

国半

替换型号 功能描述 生产厂家 企业 LOGO 操作

Quad 2-input NAND gate

ROHM

罗姆

High Voltage CMOS Logic ICs

ROHM

罗姆

High Voltage CMOS Logic ICs

ROHM

罗姆

CMOS NAND GATES

TI

德州仪器

Quad 2-Input NOR(NAND) Buffered B Series Gate

NSC

国半

Quad 2-Input NOR,NAND Buffered B Series Gate

NSC

国半

Quad 2-Input NOR,NAND Buffered B Series Gate

NSC

国半

Quad 2-Input NOR,NAND Buffered B Series Gate

NSC

国半

Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate

FAIRCHILD

仙童半导体

CMOS NAND GATES

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州仪器

CMOS NAND GATES

TI

德州仪器

NAND GATES

STMICROELECTRONICS

意法半导体

NAND GATES

STMICROELECTRONICS

意法半导体

Quadruple 2-input NAND Gate

HITACHIHitachi Semiconductor

日立日立公司

Quadruple 2-input NAND gate

PHILIPS

飞利浦

Quadruple 2-input NAND gate

PHILIPS

飞利浦

B-Suffix Series CMOS Gates

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

B-SUFFIX SERIES CMOS GATES

ONSEMI

安森美半导体

B−Suffix Series CMOS Gates

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

B-SUFFIX SERIES CMOS GATES

ONSEMI

安森美半导体

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NAND GATE

RANDE

Quad 2 Input NAND Gate

TOSHIBA

东芝

C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

TOSHIBA

东芝

QUAD 2 INPUT NAND GATE

TOSHIBA

东芝

CD4011UB产品属性

  • 类型

    描述

  • Supply voltage (Min) (V):

    3

  • Supply voltage (Max) (V):

    18

  • Number of channels (#):

    4

  • Inputs per channel:

    2

  • IOL (Max) (mA):

    6.8

  • IOH (Max) (mA):

    -6.8

  • Input type:

    Standard CMOS

  • Output type:

    Push-Pull

  • Features:

    High speed (tpd 10- 50ns)

  • Data rate (Max) (Mbps):

    8

  • Rating:

    Catalog

更新时间:2026-5-19 14:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
陶瓷
24+
CDIP-14
52446
只做原装进口现货
24+
DIP
25
Harris Corporation
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
陶瓷
22+
CDIP-14
20000
公司只做原装 品质保障
TI
23+
NA
20000
TI
2511
SOP-14
3200
电子元器件采购降本 30%!原厂直采,砍掉中间差价
TI/德州仪器
QQ咨询
DIP
1200
全新原装 研究所指定供货商
TI
20+
N/A
3600
专业配单,原装正品假一罚十,代理渠道价格优
TI
22+
5000
只做原装鄙视假货15118075546
TI
24+
DIP/SMD
6980
原装现货,可开13%税票

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