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CD4001价格
参考价格:¥0.9678
型号:CD4001BE 品牌:TEXAS 备注:这里有CD4001多少钱,2025年最近7天走势,今日出价,今日竞价,CD4001批发/采购报价,CD4001行情走势销售排行榜,CD4001报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
CD4001 | Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
CD4001 | CMOS NOR Gate Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f | Intersil | ||
CD4001 | Quad 2-Input NOR Buffered B Series Gate • Features n Low power TTL: Fan out of 2 driving 74L compatibility: or 1 driving 74LS n 5V–10V–15V parametric ratings n Symmetrical output characteristics n Maximum input leakage 1 mA at 15V over full temperature range General Description The CD4001BC and CD4011BC quad gates are monolithic | SYC | ||
CD4001 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
CD4001 | Quad 2-Input NOR(NAND) Buffered B Series Gate 文件:164.76 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | ||
CD4001 | CMOS NOR Gates 文件:206.27 Kbytes Page:5 Pages | TI 德州仪器 | ||
CD4001 | Quad 2-Input NOR,NAND Buffered B Series Gate 文件:167.6 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | ||
CD4001 | CMOS NOR Gate | RENESAS 瑞萨 | ||
CD4001 | CMOS模拟多路复用器/解复用器 | ETC 知名厂家 | ETC | |
CD4001 | 4路2输入或非门 | i-coreWUXI i-CORE Electronics Co., Ltd 中微爱芯无锡中微爱芯电子有限公司 | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
QUAD 2-INPUT NOR BUFFERED B SERIES GATE ■ DESCRIPTION The UTC CD4001B contains four independent 2-input NOR gates,they perform the function Y=A+B in positive logic. ■ FEATURES * 5V-10V-15V Parametric Ratings * Quad 2-Input NOR Gate * Symmetrical Output Characteristics * Maximum Input Current of 1uA at 15V Over Full P | UTC 友顺 | |||
CMOS High Voltage Logic Features High Input Voltage up to 20V Symmetrical Output Characteristics Max input current 1μA at 18V over full Military Temperature Range Low Power TTL compatible Specified at 5V, 10V & 15V Direct drop-in replacement for obsolete components in long term programs. | SS | |||
CMOS High Voltage Logic Features High Input Voltage up to 20V Symmetrical Output Characteristics Max input current 1μA at 18V over full Military Temperature Range Low Power TTL compatible Specified at 5V, 10V & 15V Direct drop-in replacement for obsolete components in long term programs. | SS | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
QUAD 2-INPUT NOR BUFFERED B SERIES GATE ■ DESCRIPTION The UTC CD4001B contains four independent 2-input NOR gates,they perform the function Y=A+B in positive logic. ■ FEATURES * 5V-10V-15V Parametric Ratings * Quad 2-Input NOR Gate * Symmetrical Output Characteristics * Maximum Input Current of 1uA at 15V Over Full P | UTC 友顺 | |||
QUAD 2-INPUT NOR BUFFERED B SERIES GATE ■ DESCRIPTION The UTC CD4001B contains four independent 2-input NOR gates,they perform the function Y=A+B in positive logic. ■ FEATURES * 5V-10V-15V Parametric Ratings * Quad 2-Input NOR Gate * Symmetrical Output Characteristics * Maximum Input Current of 1uA at 15V Over Full P | UTC 友顺 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gate Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standard Symmetrical Output Characteristics • 100 Tested for Maximum Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Curre | RENESAS 瑞萨 | |||
CMOS NOR Gate Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f | Intersil | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 |
替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
NOR GATE | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
QUADRUPLE 2 INPUT NOR GATE | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Quadruple 2-input NOR gate | Philips 飞利浦 | Philips | ||
Quadruple 2-input NOR gate | Philips 飞利浦 | Philips | ||
Quadruple 2-input NOR gate | Philips 飞利浦 | Philips | ||
Quadruple 2-input NOR gate | Philips 飞利浦 | Philips | ||
Single Supply Quad Comparators | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
B−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
UB-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
UB−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | ||
INPUT NOR GATE | RANDE | RANDE | ||
Quad 2 Input NOR Gate | TOSHIBA 东芝 | TOSHIBA | ||
QUAD 2 INPUT NOR GATE | TOSHIBA 东芝 | TOSHIBA |
CD4001产品属性
- 类型
描述
- 型号
CD4001
- 制造商
NSC
- 制造商全称
National Semiconductor
- 功能描述
Quad 2-Input NOR(NAND) Buffered B Series Gate
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
标准封装 |
8048 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
TI(德州仪器) |
24+ |
TSSOP14 |
970 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
|||
TI/德州仪器 |
25+ |
DIP |
36000 |
TI/德州仪器全新特价CD4001即刻询购立享优惠#长期有货 |
|||
TI |
SOP14 |
50000 |
12 |
||||
TI |
2430+ |
CDIP |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TI |
2109 |
SOP-14 |
2500 |
只做原装正品 |
|||
RCA |
24+ |
DIP |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
|||
TI |
23+ |
CDIP-14 |
6800 |
原装正品,支持实单 |
|||
TI |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
TI/德州仪器 |
22+ |
SOIC-14 |
500000 |
原装现货支持实单价优/含税 |
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CD4001规格书下载地址
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CD4001数据表相关新闻
CD15ED240JO3F
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可立即发货
2019-9-20CD4011
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CD1561SK ,CHIPSHINE,SOT23-5代理正品DC-DC降压IC
2019-3-16
DdatasheetPDF页码索引
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