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CD40晶体管资料
CD400A别名:CD400A三极管、CD400A晶体管、CD400A晶体三极管
CD400A生产厂家:中国大陆半导体企业
CD400A制作材料:
CD400A性质:射频/高频放大 (HF)_静噪放大 (LN)_宽频带放大
CD400A封装形式:直插封装
CD400A极限工作电压:15V
CD400A最大电流允许值:0.03A
CD400A最大工作频率:<1MHZ或未知
CD400A引脚数:3
CD400A最大耗散功率:0.2W
CD400A放大倍数:
CD400A图片代号:A-11
CD400Avtest:15
CD400Ahtest:999900
- CD400Aatest:0.03
CD400Awtest:0.2
CD400A代换 CD400A用什么型号代替:
CD40价格
参考价格:¥0.0000
型号:CD4000AE 品牌:Semiconductors 备注:这里有CD40多少钱,2025年最近7天走势,今日出价,今日竞价,CD40批发/采购报价,CD40行情走势销售排行榜,CD40报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMOS 4 Bit Arithmetic Logic Unit Description The CD40181BMS is a low power four bit parallel arithmetic logic unit (ALU) capable of providing 16 binary arithmetic operations on two four-bit words and 16 logical functions of two Boolean variables. The mode control input M selects logical (M = High) or arithmetic (M = Low) opera | Intersil | |||
CMOS NOR Gate Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f | Intersil | |||
CMOS NOR Gate Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f | Intersil | |||
CMOS NOR Gate Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standard Symmetrical Output Characteristics • 100 Tested for Maximum Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Curre | RENESAS 瑞萨 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | Fairchild 仙童半导体 | |||
CMOS NOR Gate Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f | Intersil | |||
Quad 2-Input NOR Buffered B Series Gate • Features n Low power TTL: Fan out of 2 driving 74L compatibility: or 1 driving 74LS n 5V–10V–15V parametric ratings n Symmetrical output characteristics n Maximum input leakage 1 mA at 15V over full temperature range General Description The CD4001BC and CD4011BC quad gates are monolithic | SYC | |||
QUAD 2-INPUT NOR BUFFERED B SERIES GATE ■ DESCRIPTION The UTC CD4001B contains four independent 2-input NOR gates,they perform the function Y=A+B in positive logic. ■ FEATURES * 5V-10V-15V Parametric Ratings * Quad 2-Input NOR Gate * Symmetrical Output Characteristics * Maximum Input Current of 1uA at 15V Over Full P | UTC 友顺 | |||
CMOS High Voltage Logic Features High Input Voltage up to 20V Symmetrical Output Characteristics Max input current 1μA at 18V over full Military Temperature Range Low Power TTL compatible Specified at 5V, 10V & 15V Direct drop-in replacement for obsolete components in long term programs. | SS | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | Fairchild 仙童半导体 | |||
CMOS High Voltage Logic Features High Input Voltage up to 20V Symmetrical Output Characteristics Max input current 1μA at 18V over full Military Temperature Range Low Power TTL compatible Specified at 5V, 10V & 15V Direct drop-in replacement for obsolete components in long term programs. | SS | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | Fairchild 仙童半导体 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | Fairchild 仙童半导体 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | Fairchild 仙童半导体 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | Fairchild 仙童半导体 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | Fairchild 仙童半导体 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | Fairchild 仙童半导体 | |||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate General Description The CD4001BC and CD4011BC quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also | Fairchild 仙童半导体 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
QUAD 2-INPUT NOR BUFFERED B SERIES GATE ■ DESCRIPTION The UTC CD4001B contains four independent 2-input NOR gates,they perform the function Y=A+B in positive logic. ■ FEATURES * 5V-10V-15V Parametric Ratings * Quad 2-Input NOR Gate * Symmetrical Output Characteristics * Maximum Input Current of 1uA at 15V Over Full P | UTC 友顺 | |||
QUAD 2-INPUT NOR BUFFERED B SERIES GATE ■ DESCRIPTION The UTC CD4001B contains four independent 2-input NOR gates,they perform the function Y=A+B in positive logic. ■ FEATURES * 5V-10V-15V Parametric Ratings * Quad 2-Input NOR Gate * Symmetrical Output Characteristics * Maximum Input Current of 1uA at 15V Over Full P | UTC 友顺 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gate Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f | Intersil | |||
CMOS NOR Gate Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standard Symmetrical Output Characteristics • 100 Tested for Maximum Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Curre | RENESAS 瑞萨 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series | TI 德州仪器 | |||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Toroidal Surface Mount Inductors | CANDD | CANDD | ||
10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL | POWERBOX | POWERBOX | ||
NOR GATE | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Dual 3-input NOR gate and inverter | Philips 飞利浦 | Philips | ||
Dual 3-input NOR gate and inverter | Philips 飞利浦 | Philips | ||
Dual 3-input NOR gate and inverter | Philips 飞利浦 | Philips | ||
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | ||
DUAL THREE INPUT NOR GATE PLUS INVERTER | RANDE | RANDE |
CD40产品属性
- 类型
描述
- 型号
CD40
- 制造商
TI
- 制造商全称
Texas Instruments
- 功能描述
CMOS DUAL UP-COUNTERS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
23+ |
CDIP |
20000 |
全新原装假一赔十 |
|||
I-CORE |
24+ |
DIP14 |
45000 |
绝对原厂原装,长期优势可定货 |
|||
陶瓷 |
25+ |
CDIP-14 |
880000 |
明嘉莱只做原装正品现货 |
|||
TI |
20+ |
N/A |
3600 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
TI/TEXAS |
NEW |
DIP陶瓷 |
8931 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
TI |
18+ |
N/A |
6000 |
主营军工偏门料,国内外都有渠道 |
|||
CD4000BE |
25+ |
57 |
57 |
||||
TI |
22+ |
5000 |
只做原装鄙视假货15118075546 |
||||
陶瓷 |
22+ |
CDIP-14 |
20000 |
公司只做原装 品质保障 |
|||
TI |
23+ |
CDIP |
5000 |
全新原装,支持实单,非诚勿扰 |
CD40规格书下载地址
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DdatasheetPDF页码索引
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