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CD40晶体管资料

CD400A别名：CD400A三极管、CD400A晶体管、CD400A晶体三极管
CD400A生产厂家：中国大陆半导体企业
CD400A制作材料：
CD400A性质：射频/高频放大（HF）_静噪放大（LN）_宽频带放大
CD400A封装形式：直插封装
CD400A极限工作电压：15V
CD400A最大电流允许值：0.03A
CD400A最大工作频率：<1MHZ或未知
CD400A引脚数：3
CD400A最大耗散功率：0.2W
CD400A放大倍数：
CD400A图片代号：A-11
CD400Avtest：15
CD400Ahtest：999900
CD400Aatest：0.03
CD400Awtest：0.2

CD400A代换 CD400A用什么型号代替：

CD40价格

参考价格：￥0.0000

型号：CD4000AE 品牌：Semiconductors 备注：这里有CD40多少钱，2026年最近7天走势，今日出价，今日竞价，CD40批发/采购报价，CD40行情走势销售排行榜，CD40报价。

型号	功能描述	生产厂家企业	LOGO
CD4001BE	丝印代码：CD4001BE；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BE.A	丝印代码：CD4001BE；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BEE4	丝印代码：CD4001BE；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BF	丝印代码：CD4001BF；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BF.A	丝印代码：CD4001BF；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BF3A	丝印代码：CD4001BF3A；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BF3A.A	丝印代码：CD4001BF3A；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BM	丝印代码：CD4001BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BM.A	丝印代码：CD4001BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BM96	丝印代码：CD4001BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BM96.A	丝印代码：CD4001BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BM96E4	丝印代码：CD4001BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BM96G4	丝印代码：CD4001BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BMT	丝印代码：CD4001BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BNSR	丝印代码：CD4001B；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BNSR.A	丝印代码：CD4001B；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001BNSRG4	丝印代码：CD4001B；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4001UBE	丝印代码：CD4001UBE；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4001UBE.A	丝印代码：CD4001UBE；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4001UBEE4	丝印代码：CD4001UBE；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4001UBF	丝印代码：CD4001UBF；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4001UBF.A	丝印代码：CD4001UBF；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4001UBF3A	丝印代码：CD4001UBF3A；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4001UBF3A.A	丝印代码：CD4001UBF3A；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4001UBM	丝印代码：CD4001UBM；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4001UBM96	丝印代码：CD4001UBM；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4001UBM96.A	丝印代码：CD4001UBM；CMOS Quad 2-Input NOR Gate High-Voltage Types (20-Volt Rating) Features: Propagation delay time = 30 ns {typ.) at CL =509pF, Vpp=10V Standardized symmetrical output characteristics 8 100% tested for maximum quiescent current at20V a Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series	TI 德州仪器	TI
CD4002BE	丝印代码：CD4002BE；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4002BE.A	丝印代码：CD4002BE；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4002BF	丝印代码：CD4002BF；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4002BF.A	丝印代码：CD4002BF；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4002BM	丝印代码：CD4002BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4002BM96	丝印代码：CD4002BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4002BM96.A	丝印代码：CD4002BM；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4002BNSR	丝印代码：CD4002B；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4002BNSR.A	丝印代码：CD4002B；CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov	TI 德州仪器	TI
CD4006BF3A	丝印代码：CD4006BF3A；CMOS 18-Stage Static Shift Register Features: = Fully st operation = Shifting rates up to 12 MHz @ 10 V (typ) Pormanont register storage with clock fine high or low — no information recirculation required = 100% tested for quiescent current at 20 V = Standardized, symmetrical output characteristics #5V, 10-V, and 16-V par	TI 德州仪器	TI
CD4006BF3A.A	丝印代码：CD4006BF3A；CMOS 18-Stage Static Shift Register Features: = Fully st operation = Shifting rates up to 12 MHz @ 10 V (typ) Pormanont register storage with clock fine high or low — no information recirculation required = 100% tested for quiescent current at 20 V = Standardized, symmetrical output characteristics #5V, 10-V, and 16-V par	TI 德州仪器	TI
CD4007UBE	丝印代码：CD4007UBE；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBE.A	丝印代码：CD4007UBE；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBEE4	丝印代码：CD4007UBE；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBF	丝印代码：CD4007UBF；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBF.A	丝印代码：CD4007UBF；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBF3A	丝印代码：CD4007UBF3A；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBF3A.A	丝印代码：CD4007UBF3A；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBM	丝印代码：CD4007UBM；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBM96	丝印代码：CD4007UBM；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBM96.A	丝印代码：CD4007UBM；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBMT	丝印代码：CD4007UBM；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBNSR	丝印代码：CD4007UB；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4007UBNSR.A	丝印代码：CD4007UB；CMOS Dual Complementary Pair Plus Inverter Features: Standardized symmetrical output characteristics Medium Speed Operation — tpyy, tp H = 30 ns (typ.) at10 Vv = 100% tested for quiescent current at 20 V = Meets all requirements of JEDEC Tentative Standard No. 138, “Standard Specifications for Description of ‘B’ Series CMOS De	TI 德州仪器	TI
CD4009UBE	丝印代码：CD4009UBE；CMOS Hex Buffers/Converters Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings	TI 德州仪器	TI
CD4009UBE.A	丝印代码：CD4009UBE；CMOS Hex Buffers/Converters Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings	TI 德州仪器	TI
CD4009UBEE4	丝印代码：CD4009UBE；CMOS Hex Buffers/Converters Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings	TI 德州仪器	TI
CD4009UBF3A	丝印代码：CD4009UBF3A；CMOS Hex Buffers/Converters Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings	TI 德州仪器	TI
CD4009UBF3A.A	丝印代码：CD4009UBF3A；CMOS Hex Buffers/Converters Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings	TI 德州仪器	TI
CD4009UBM	丝印代码：CD4009UBM；CMOS Hex Buffers/Converters Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings	TI 德州仪器	TI
CD4009UBM.A	丝印代码：CD4009UBM；CMOS Hex Buffers/Converters Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings	TI 德州仪器	TI
CD4009UBMT	丝印代码：CD4009UBM；CMOS Hex Buffers/Converters Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings	TI 德州仪器	TI
CD4009UBMT.A	丝印代码：CD4009UBM；CMOS Hex Buffers/Converters Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings	TI 德州仪器	TI

替换型号	功能描述	生产厂家企业	LOGO
4000	Toroidal Surface Mount Inductors	CANDD	CANDD
4000	10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL	POWERBOX	POWERBOX
HCC4000BF	NOR GATE	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HEF4000B	Dual 3-input NOR gate and inverter	PHILIPS 飞利浦	PHILIPS
HEF4000BD	Dual 3-input NOR gate and inverter	PHILIPS 飞利浦	PHILIPS
HEF4000BP	Dual 3-input NOR gate and inverter	PHILIPS 飞利浦	PHILIPS
NTE4000	COMPLEMENTARY METAL OXIDE SILICON	NTE	NTE
SCL4000B	DUAL THREE INPUT NOR GATE PLUS INVERTER	RANDE	RANDE

CD40产品属性

类型
描述
型号
CD40
制造商
TI
制造商全称
Texas Instruments
功能描述
CMOS DUAL UP-COUNTERS

CD40供应商更多...

更新时间：2026-3-14 14:48:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	CD40117BE	HAR	2026+	DIP14	1275	原装正品,假一罚十!	询价
深圳市恒达亿科技有限公司	CD40117BE	HI	25+	DIP-14	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市一线半导体有限公司	CD40117BE	HAR	24+	DIP	1735		询价
深圳市安富世纪电子有限公司	CD40117BE	RCA	23+	DIP-14P	1994	全新原装正品现货,支持订货	询价
千层芯半导体(深圳)有限公司	CD40117BE	HAR	24+	DIP-14	20000	一级代理原装现货假一罚十	询价
深圳市昂芯微科技有限公司	CD40117BE	TI	23+	N/A	560	原厂原装	询价
深圳市河锋鑫科技有限公司	CD40117BEG4	TI	22+	14PDIP	9000	原厂渠道,现货配单	询价
深圳市冠亿通科技有限公司	CD40117BE	Texas Instruments	24+25+		16500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
深圳市得捷芯城科技有限公司	CD40117BE	TI	25+	PDIP-14	21000	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市毅创辉电子科技有限公司	CD40117BEG4	TI	23+	14-DIP	15000	TI现货商!原装正品!	询价

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DdatasheetPDF页码索引

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CD40芯片相关品牌

CD40规格书下载地址

CD40参数引脚图相关

CD40数据表相关新闻

CD15ED240JO3F

CD40100BE全新原装现货

CD3500GS全新原装现货

CD4011

CD40106BM96顺德利科技正品原装进口稳定的货源优势的价格

CD1561SK，CHIPSHINE，SOT23-5代理正品DC-DC降压IC

DdatasheetPDF页码索引