丝印代码：CC1120；CC1120 High-Performance RF Transceiver for Narrowband Systems

1.1 Features 1 • High-Performance, Single-Chip Transceiver – Adjacent Channel Selectivity: 64 dB at 12.5-kHz Offset – Blocking Performance: 91 dB at 10 MHz – Excellent Receiver Sensitivity: • –123 dBm at 1.2 kbps • –110 dBm at 50 kbps • –127 dBm Using Built-in Coding Gain – Very Low Phase

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Optocoupler with Phototransistor Output

Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output fo

P-Channel Enhancement-Mode Vertical DMOS Power FETs???

P-Channel Enhancement-Mode Vertical DMOS Power FETs Applications □ Motor controls □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

文件：180.25 Kbytes Page：12 Pages

N-Channel Enhancement-Mode Vertical DMOS Power FETs???

文件：136.07 Kbytes Page：4 Pages