~9째 spot beam beam. Optimized for high-power 3535 size LED packages. Assembly with holder and installation tape.

文件：6.90196 Mbytes Page：7 Pages

包装：散装 描述：ASSEMBLYROUND1 POS32.0MM (D)19,0 光电器件 光学 - 镜头

光电附件

~20째 40째 oval beam

文件：8.38619 Mbytes Page：8 Pages

光电附件

包装：托盘 描述：ASSEMBLYROUND1 POS32.0MM (D)19,0 光电器件 光学 - 镜头

Silicon MOS IC

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)