Cascadable Amplifier 10 to 1200 MHz

Description The A1211 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF

Cascadable Amplifier 100 to 1200 MHz

Description The A1212 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF choke is used for DC

连接器附件

连接器附件

连接器附件

包装：散装 描述：CIRCULAR 连接器，互连器件 圆形连接器组件

包装：袋 描述：CIRCULAR 连接器，互连器件 圆形连接器配件

Cascadable Amplifier 10 to 1200 MHz

文件：381.18 Kbytes Page：2 Pages

Cascadable Amplifier 100 to 1200 MHz

文件：386.03 Kbytes Page：2 Pages

Cascadable Amplifier 100 - 1200 MHz

文件：730.5 Kbytes Page：5 Pages

~16째 diffused spot beam optimized for Nichia NS6x83. Assembly with black holder.

文件：4.62153 Mbytes Page：4 Pages

~15째 smooth spot beam optimized for Nichia NS6x83. Assembly with black holder.

文件：4.94188 Mbytes Page：4 Pages

~11째 spot beam optimized for Nichia NS6x83. Assembly with black holder.

文件：4.75914 Mbytes Page：4 Pages

~45째 x 15째 oval beam optimized for Nichia NS6x83. Assembly with black holder.

文件：4.82411 Mbytes Page：4 Pages

~30째 medium beam optimized for Nichia NS6x83. Assembly with black holder.

文件：5.17949 Mbytes Page：4 Pages

Laura-XP series

文件：2.46827 Mbytes Page：10 Pages

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board