Cascadable Amplifier 100 to 1200 MHz

Description The A1212 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF choke is used for DC

(non-RoHS) Cascadable, Low Volt

The CA1212 RF (A1212) connectorized version amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This feedback amplifier design uses 2 GaAs FET transistors In parallel, and displays impressive performance characteristics ·Very Low Noise: 1.8 dB (Typ.)\n·High Power Added Efficiency: 20%\n·High Output Power: +19 dBm (Typ.);

封装/外壳：模块，SMA 连接器 包装：托盘 描述：AMPLIFIER,IN SMA HOUSING RF/IF，射频/中频和 RFID 射频放大器

Cascadable Amplifier 100 - 1200 MHz

文件：730.5 Kbytes Page：5 Pages

Cascadable Amplifier 100 to 1200 MHz

文件：386.03 Kbytes Page：2 Pages

~16째 diffused spot beam optimized for Nichia NS6x83. Assembly with black holder.

文件：4.62153 Mbytes Page：4 Pages

~15째 smooth spot beam optimized for Nichia NS6x83. Assembly with black holder.

文件：4.94188 Mbytes Page：4 Pages

包装：散装 描述：LENS CLEAR 16DEG SPOT ADH TAPE 光电器件 光学 - 镜头

~11째 spot beam optimized for Nichia NS6x83. Assembly with black holder.

文件：4.75914 Mbytes Page：4 Pages

~45째 x 15째 oval beam optimized for Nichia NS6x83. Assembly with black holder.

文件：4.82411 Mbytes Page：4 Pages

~30째 medium beam optimized for Nichia NS6x83. Assembly with black holder.

文件：5.17949 Mbytes Page：4 Pages

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.