倾角传感器

丝印代码：C801FS；LMR38010 SIMPLE SWITCHER짰 4.2-V to 80-V, 1-A Synchronous Buck Converter with 40-關A IQ

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Ultra Low Power 128K, LCD MCU Family

Ultra Low Power Consumption at 3.6 V -130 μA/MHz Low-Power Active mode with dc-dc enabled -120 nA sleep current w/ data retention; POR monitor enabled -450 nA sleep mode with SmaRTClock (internal LFO) -600 nA sleep mode with SmaRTClock (ext. crystal) -2 μs wakeup time; 1.5 μA analog settling

包装：散装 描述：CABLE TWINAXIAL 22AWG 1000' 电缆，电线 同轴电缆（射频）

Diplexer, 5-864/1125-1525MHz

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UNLESS OTHERWISE SPECIFIED

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封装/外壳：16-DIP（0.600"，15.24mm），13 引线 包装：卷带（TR） 描述：18DIP DISPLAY - ORANGE-RED 630NM 光电器件 显示器模块 - LED 字符与数字

LED数码管

LED数码管

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead