200V, 7.5A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo

200V, 7.5A Enhancement Mode GaN Power Transistor

Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si)

200V, 7.5A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo

200V, 7.5A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo

200V, 7.5A Enhancement Mode GaN Power Transistor

Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si)