| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ISL70024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 |   | |
ISL70024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | |
ISL70024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistor The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) low Dose Rate (LDR). A •\n• Very low rDS(ON) 45mΩ (typical) \n• Ultra low total gate charge 2.5nC (typical) \n• SEE tolerance (VDS = 160V, VGS = 0V) \n• Characterized at LET 86 MeV•cm2/mg \n• Radiation hardness assurance testing (lot-by-lot) \n• High dose rate (50-300rad(Si)/s): 100krad(Si) \n• Low dose rate (0.01rad(Si)/; | RENESAS 瑞萨 | | |
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) | RENESAS 瑞萨 | | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo | RENESAS 瑞萨 | | ||
SI-70024 文件：252.72 Kbytes Page：4 Pages | BEL | |
ISL70024SEH产品属性
- 类型
描述
- IDS (A)：
7.5
- VGS(TH) (Max) (V)：
2.5
- VGS (Max) (V)：
6
- RDSON (Typ) (mΩ)：
45
- QG (nC) typ (nC)：
14
- Thermal Resistance θJC (°C/W)：
18.7
- High Dose Rate (HDR) (krad (Si))：
100
- Low Dose Rate (LDR) (krad (Si))：
75
- Lead Count (#)：
4
- Pkg. Type：
CLCC
- Temp. Range：
-55 to 125°C
- Qualification Level：
Modified Class V
- Models Available：
SPICE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTE |
24+ |
SOP14 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
IPS |
09+ |
TO-220 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Intersil |
21+ |
SOP-8 |
10000 |
只做原装,质量保证 |
|||
INTERSIL |
24+ |
QFN |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
INFINEON |
24+ |
0509OPB |
3000 |
全新原装现货 优势库存 |
|||
RENESAS |
22+ |
SOP |
6000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
ISL |
26+ |
QFN |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
Intersil |
25+ |
SOP-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
ILSIM |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
INTERSIL |
22+ |
QFN-16P |
8000 |
原装正品支持实单 |
ISL70024SEH规格书下载地址
ISL70024SEH参数引脚图相关
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- ISL8104
- ISL8103
- ISL8102
- ISL8101
- ISL8088
- ISL8036
- ISL8033
- ISL8026
- ISL8025
- ISL8024
- ISL8023
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- ISL8018
- ISL8016
- ISL8014
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- ISL8012
- ISL8011
- ISL8010
- ISL8002
- ISL70227SRHX
- ISL70227SRHMX
- ISL70227SRHMF
- ISL70227SRHF/PROTO
- ISL70227SRHF
- ISL70227SRH
- ISL70227SEHX
- ISL70227SEHVF
- ISL70227SEHF/PROTO
- ISL70227SEHF
- ISL70227SEH
- ISL70227MHEVAL1Z
- ISL70218SRHX/SAMPLE
- ISL70218SRHX
- ISL70218SRHMX
- ISL70218SRHMF
- ISL70218SRHMEVAL1Z
- ISL70218SRHF/PROTO
- ISL70218SRHF
- ISL70218SRH
- ISL70002SEH
- ISL70001SRHX/SAMPLE
- ISL70001SRHX
- ISL70001SRHVX
- ISL70001SRHVF
- ISL70001SRHQF
- ISL70001SRHF/PROTO
- ISL70001SRHF
- ISL70001SRHEVAL1Z
- ISL70001SRH_11
- ISL70001SRH
- ISL70001SEHX
- ISL70001SEHVFE
- ISL70001SEHVF
- ISL70001SEHFE/PROTO
- ISL70001SEH
- ISL70001ASEHX
- ISL70001ASEHVX
- ISL70001ASEHVFE
- ISL70001ASEHVF
- ISL6884
- ISL6845
- ISL6844
- ISL6843
- ISL6842
- ISL6841
- ISL6840
- ISL6801
- ISL6755
- ISL6754
- ISL6753
- ISL6752
- ISL6745
- ISL6744
- ISL6742
- ISL6741
- ISL6740
- ISL6730
- ISL6729
- ISL6726
ISL70024SEH数据表相关新闻
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DdatasheetPDF页码索引
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