C5750X7S2A106M价格

参考价格:¥5.1151

型号:C5750X7S2A106M230KB 品牌:TDK 备注:这里有C5750X7S2A106M多少钱,2024年最近7天走势,今日出价,今日竞价,C5750X7S2A106M批发/采购报价,C5750X7S2A106M行情走势销售排行榜,C5750X7S2A106M报价。
型号 功能描述 生产厂家&企业 LOGO 操作
C5750X7S2A106M

RFLDMOSWidebandIntegratedPowerAmplifiers

TheA2I09VD030Nwidebandintegratedcircuitisdesignedwithon−chip matchingthatmakesitusablefrom575to1300MHz.Thismulti−stage structureisratedfor48to55Voperationandcoversalltypicalcellularbase stationmodulationformats. Features •On−chipmatching(50ohminput,D

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
C5750X7S2A106M

1805–2200MHz,107WAVG.,48VAIRFASTRFPOWERGaNTRANSISTOR

Features Highterminalimpedancesforoptimalbroadbandperformance Advancedhighperformancein--packageDoherty AbletowithstandextremelyhighoutputVSWRandbroadbandoperating conditions

nxpNXP Semiconductors

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C5750X7S2A106M

N--ChannelEnhancement--ModeLateralMOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
C5750X7S2A106M

RFPowerLDMOSTransistor

N--ChannelEnhancement--ModeLateralMOSFET This50wattRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof1805to1880MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, IDQ=1800mA,Pout=50WattsAvg.,InputSign

nxpNXP Semiconductors

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nxp
C5750X7S2A106M

RFPowerLDMOSTransistors

文件:634.77 Kbytes Page:20 Pages

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恩智浦恩智浦半导体公司

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C5750X7S2A106M

RFPowerGaNTransistor

文件:364.45 Kbytes Page:8 Pages

nxpNXP Semiconductors

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C5750X7S2A106M

RFPowerGaNTransistor

文件:374.42 Kbytes Page:8 Pages

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C5750X7S2A106M

RFPowerLDMOSTransistor

文件:364.8 Kbytes Page:9 Pages

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恩智浦恩智浦半导体公司

nxp
C5750X7S2A106M

RFPowerLDMOSTransistors

文件:437.43 Kbytes Page:15 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale
C5750X7S2A106M

2012MLCCPRODUCTGUIDE

文件:9.22191 Mbytes Page:64 Pages

TDKTDK Corporation

东电化(中国)投资有限公司

TDK

CommercialGrade(MidVoltage(100to630V))

Features •Voltageratingof100Vto630Vwithcapacitancerangeupto15μF. •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Lowresidualinductanceassuressuperiorfrequencycharacteristics. •Excellent

TDKTDK Corporation

东电化(中国)投资有限公司

TDK

RFPowerLDMOSTransistor

N−ChannelEnhancement−ModeLateralMOSFET This2WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof728to960MHz. Features •Greaternegativegate−sourcevoltagerangeforimprovedClassC operation •On−chipmatching(50ohmin

nxpNXP Semiconductors

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nxp

1800–2200MHz,32WAVG.,48VAIRFASTRFPOWERGaNTRANSISTOR

Features HighTerminalImpedancesforOptimalBroadbandPerformance DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications

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N--ChannelEnhancement--ModeLateralMOSFET

Features AdvancedHighPerformanceIn--PackageDoherty GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems

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RFPowerLDMOSTransistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features Designedforwideinstantaneousbandwidthap

nxpNXP Semiconductors

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2110–2170MHz,18WAVG.,28VAIRFASTRFPOWERLDMOSTRANSISTOR

Features AdvancedHighPerformanceIn-PackageDoherty GreaterNegativeGate-SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems

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N-ChannelEnhancement-ModeLateralMOSFET

Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems

nxpNXP Semiconductors

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EvaluatingtheAD74115HSingle-Channel,SoftwareConfigurableInputandOutputwithHARTModem

GENERALDESCRIPTION TheEVAL-AD74115H-ARDZisafullyfeaturedevaluationboard thatcanbeusedtoevaluatethefeaturesoftheAD74115Hina fullsystemsolutionwherepowerandisolationareprovidedbythe ADP1034.TheAD74115Hisasingle-channel,softwareconfigurable, inputandoutput

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

RFPowerLDMOSTransistorN−ChannelEnhancement−ModeLateralMOSFET

This93WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor cellularbasestationapplicationscoveringthefrequencyrangeof1427to 1517MHz. Features •Advancedhighperformancein−packageDoherty •Greaternegativegate−sourcevoltagerangeforimprovedClassCoperation

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MULTILAYERCERAMICCHIPCAPACITORS

Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde

TDKTDK Corporation

东电化(中国)投资有限公司

TDK

RFPowerLDMOSTransistor

文件:690.68 Kbytes Page:8 Pages

nxpNXP Semiconductors

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nxp

RFPowerLDMOSTransistor

文件:255.19 Kbytes Page:8 Pages

nxpNXP Semiconductors

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nxp

RFPowerLDMOSTransistorN-ChannelEnhancement-ModeLateralMOSFET

文件:221.53 Kbytes Page:10 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RFPowerGaNTransistor

文件:188.97 Kbytes Page:9 Pages

nxpNXP Semiconductors

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nxp

RFPowerGaNTransistor

文件:185.05 Kbytes Page:8 Pages

nxpNXP Semiconductors

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RFPowerGaNTransistor

文件:294.88 Kbytes Page:8 Pages

nxpNXP Semiconductors

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nxp

RFPowerGaNTransistor

文件:344.75 Kbytes Page:8 Pages

nxpNXP Semiconductors

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nxp

RFPowerLDMOSTransistor

文件:831.07 Kbytes Page:16 Pages

nxpNXP Semiconductors

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nxp

RFPowerLDMOSTransistor

文件:319.44 Kbytes Page:8 Pages

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nxp

RFPowerLDMOSTransistor

文件:389.33 Kbytes Page:16 Pages

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RFLDMOSWidebandIntegratedPowerAmplifiers

文件:319.31 Kbytes Page:13 Pages

nxpNXP Semiconductors

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封装/外壳:2220(5750 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 10UF 100V X7S 2220 电容器 陶瓷电容器

TDKTDK Corporation

东电化(中国)投资有限公司

TDK

MultilayerCeramicChipCapacitors

文件:237.62 Kbytes Page:3 Pages

TDKTDK Corporation

东电化(中国)投资有限公司

TDK

封装/外壳:2220(5750 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 10UF 100V X7S 2220 电容器 陶瓷电容器

TDKTDK Corporation

东电化(中国)投资有限公司

TDK

CommercialGrade(SoftTermination)

文件:138.61 Kbytes Page:1 Pages

TDKTDK Corporation

东电化(中国)投资有限公司

TDK

SPECIFICATIONFORTDKMULTILAYERCERAMICCHIPCAPACITORS

文件:104.52 Kbytes Page:1 Pages

TDKTDK Corporation

东电化(中国)投资有限公司

TDK

C5750X7S2A106M产品属性

  • 类型

    描述

  • 型号

    C5750X7S2A106M

  • 功能描述

    多层陶瓷电容器MLCC - SMD/SMT 2220 10uF 100volts X7S 20%

  • RoHS

  • 制造商

    American Technical Ceramics(ATC)

  • 电容

    10 pF

  • 容差

    1 %

  • 电压额定值

    250 V

  • 温度系数/代码

    C0G(NP0) 外壳代码 -

  • in

    0505 外壳代码 -

  • mm

    1414

  • 工作温度范围

    - 55 C to + 125 C

  • 产品

    Low ESR MLCCs

  • 封装

    Reel

更新时间:2024-6-14 15:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TDK
2018+
SMD
5500
长期供应原装现货实单可谈
TDK
2018+
SMD
96500
一级代理/全新现货/长期供应!
TDK(东电化)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TDK/东电化
SMD
265209
假一罚十原包原标签常备现货!
TDK/东电化
23+
NA/
565
优势代理渠道,原装正品,可全系列订货开增值税票
TDK/东电化
23+
SMD
69433
TDK原厂直供,全系列可订货。美金交易,大陆交货。
TDK-东电化
24+25+/26+27+
车规-被动器件
96800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
TDK/东电化
21+
SMD2220
6688
十年老店,原装正品
TDK
2019+
SMD
120000
原盒原包装 可BOM配套
TDK
23+
SMD
2530
原厂原装正品

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