RF LDMOS Wideband Integrated Power Amplifiers

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor

RF Power LDMOS Transistors

RF Power GaN Transistor

RF Power GaN Transistor

RF Power LDMOS Transistor

RF Power LDMOS Transistors

文件：437.43 Kbytes Page：15 Pages

2012 MLCC PRODUCT GUIDE

文件：9.22191 Mbytes Page：64 Pages

Commercial Grade ( Mid Voltage (100 to 630V) )

Features • Voltage rating of 100V to 630V with capacitance range up to 15μF. • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • Low residual inductance assures superior frequency characteristics. • Excellent

RF Power LDMOS Transistor

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor

2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR

N-Channel Enhancement-Mode Lateral MOSFET

Evaluating the AD74115H Single-Channel, Software Configurable Input and Output with HART Modem

GENERAL DESCRIPTION The EVAL-AD74115H-ARDZ is a fully featured evaluation board that can be used to evaluate the features of the AD74115H in a full system solution where power and isolation are provided by the ADP1034. The AD74115H is a single-channel, software configurable, input and output

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

MULTILAYER CERAMIC CHIP CAPACITORS

Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency characteristics allow for a circuit de

RF Power LDMOS Transistor

RF Power LDMOS Transistor

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power GaN Transistor

RF Power GaN Transistor

RF Power GaN Transistor

RF Power GaN Transistor

RF Power LDMOS Transistor

RF Power LDMOS Transistor

RF Power LDMOS Transistor

封装/外壳：2220（5750 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10UF 100V X7S 2220 电容器 陶瓷电容器

RF LDMOS Wideband Integrated Power Amplifiers

积层贴片陶瓷片式电容器

Multilayer Ceramic Chip Capacitors

文件：237.62 Kbytes Page：3 Pages

封装/外壳：2220（5750 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10UF 100V X7S 2220 电容器 陶瓷电容器

Commercial Grade ( Soft Termination )

文件：138.61 Kbytes Page：1 Pages

SPECIFICATION FOR TDK MULTILAYER CERAMIC CHIP CAPACITORS

文件：104.52 Kbytes Page：1 Pages

贴片电容(MLCC)