MULTILAYER CERAMIC CHIP CAPACITORS

Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency characteristics allow for a circuit de

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

封装/外壳：2220（5750 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10UF 100V X7S 2220 电容器 陶瓷电容器

封装/外壳：2220（5750 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10UF 100V X7S 2220 电容器 陶瓷电容器

积层贴片陶瓷片式电容器

Commercial Grade ( Soft Termination )

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Commercial Grade ( Mid Voltage (100 to 630V) )

Features • Voltage rating of 100V to 630V with capacitance range up to 15μF. • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • Low residual inductance assures superior frequency characteristics. • Excellent

RF LDMOS Wideband Integrated Power Amplifiers

RF Power LDMOS Transistor

RF Power LDMOS Transistor

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET