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C4D10120价格
参考价格：￥49.9168
型号：C4D10120A 品牌：Cree 备注：这里有C4D10120多少钱，2025年最近7天走势，今日出价，今日竞价，C4D10120批发/采购报价，C4D10120行情走势销售排行榜，C4D10120报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon Carbide Schottky Diode Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET | Cree 科锐 |   | ||
4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m | WOLFSPEED | | ||
Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink | WOLFSPEED | | ||
Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET | Cree 科锐 | | ||
Silicon Carbide Schottky Diode FEATURES · High-Frequency Operation · Positive Temperature Coefficient · Extremely Fast Switching · No reverse recovery APPLICATIONS · AC/DC converters · Power factor correction · Switch mode power supply | ISC 无锡固电 | | ||
Silicon Carbide Schottky Diode FEATURES · High surge current capability · Positive Temperature Coefficient · Extremely Fast Switching · No reverse recovery APPLICATIONS · Solar inverter · Power factor correction · Switch mode power supply | ISC 无锡固电 | | ||
Silicon Carbide Schottky Diode Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET | Cree 科锐 | | ||
Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Lo | WOLFSPEED | | ||
4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m | WOLFSPEED | | ||
封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 1200V TO247 分立半导体产品 二极管 - 整流器 - 阵列 | WOLFSPEED | | ||
1200 V Discrete Silicon Carbide Schottky Diodes | WOLFSPEED | | ||
Silicon Carbide Schottky Diode 文件：791.44 Kbytes Page：6 Pages | Cree 科锐 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 1.2KV 10A TO252-2 分立半导体产品 二极管 - 整流器 - 单 | WOLFSPEED | | ||
1200 V Discrete Silicon Carbide Schottky Diodes | WOLFSPEED | | ||
Silicon Carbide Schottky Diode 文件：901.84 Kbytes Page：6 Pages | Cree 科锐 | | ||
Silicon Carbide Schottky Diode Z-Rec Rectifier 文件：743.52 Kbytes Page：6 Pages | Cree 科锐 | | ||
1200 V Discrete Silicon Carbide Schottky Diodes | WOLFSPEED | | ||
1200-V Direct WBG Diode Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable V F and Q RR at elevated temperatures | AnalogPower | | ||
1200-V Direct WBG Diode Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable V F and Q RR at elevated temperatures | AnalogPower | | ||
1200-V Direct WGB Diode Key Features: • SiC performance • Easy paralleling • High current carrying capability • Very low junction capacitance • Highly stable VF and QRR at elevated temperatures | AnalogPower | | ||
1200-V Direct WBG Diode Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable V F and Q RR at elevated temperatures | AnalogPower | |
C4D10120产品属性
- 类型
描述
- 型号
C4D10120
- 功能描述
肖特基二极管与整流器 SIC SCHOTTKY DIODE 1200V, 10A
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
18+ |
TO-220 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CREE/科锐 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
CREE/科锐 |
25+ |
TO-220 |
19 |
原装正品,假一罚十! |
|||
CREE |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
WOLFSPEED |
21+ |
- |
586 |
只做原装鄙视假货15118075546 |
|||
CREE(科锐) |
25+ |
SiC二极管 |
7694 |
原厂原装,价格优势 |
|||
CREE(科锐) |
24+ |
N/A |
7628 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
CREE |
23+ |
TO-220 |
6000 |
专业配单保证原装正品假一罚十 |
|||
CREESCS220KG |
25+23+ |
TO220-2 |
19791 |
绝对原装正品全新进口深圳现货 |
C4D10120规格书下载地址
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DdatasheetPDF页码索引
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