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C4D10120D价格

参考价格:¥49.9168

型号:C4D10120D 品牌:Cree 备注:这里有C4D10120D多少钱,2026年最近7天走势,今日出价,今日竞价,C4D10120D批发/采购报价,C4D10120D行情走势销售排行榜,C4D10120D报价。
型号 功能描述 生产厂家 企业 LOGO 操作
C4D10120D

Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

CREE

科锐

C4D10120D

Silicon Carbide Schottky Diode

FEATURES · High-Frequency Operation · Positive Temperature Coefficient · Extremely Fast Switching · No reverse recovery APPLICATIONS · AC/DC converters · Power factor correction · Switch mode power supply

ISC

无锡固电

C4D10120D

丝印代码:C4D10120;Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink

WOLFSPEED

C4D10120D

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 1200V TO247 分立半导体产品 二极管 - 整流器 - 阵列

WOLFSPEED

C4D10120D

1200 V Discrete Silicon Carbide Schottky Diodes

WOLFSPEED

Silicon Carbide Schottky Diode

文件:791.44 Kbytes Page:6 Pages

CREE

科锐

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

CREE

科锐

4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

WOLFSPEED

丝印代码:C4D10120;Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Lo

WOLFSPEED

4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

WOLFSPEED

C4D10120D产品属性

  • 类型

    描述

  • Current Rating:

    10 A

  • Package:

    TO-247-3

  • Technology:

    C4D

  • Maximum Continuous Current (IF):

    18 A @ 135°C

  • Total Capacitive Charge (QC (typ)):

    54 nC

  • Total Power Dissipation (PTOT):

    187 W @ 25°C

  • Lead-frame materials:

    100% matte tin solder finish over a copper lead-frame

更新时间:2026-7-24 15:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CREE
18+
TO247
85600
保证进口原装可开17%增值税发票
CREE/科锐
2025+
TO-247
5000
原装进口价格优 请找坤融电子!
CreeInc
2018+
TO-247
26976
代理原装现货/特价热卖!
CREE/科锐
2447
TO-247
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
CREE/科锐
11+
TO247
880000
明嘉莱只做原装正品现货
CREE/科锐
24+
TO247
42000
只做原装进口现货
Cree
1731
5
优势货源原装正品
CREE(科锐)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
CREEINC
2406+
TO-247
11260
诚信经营!进口原装!量大价优!
CREE
26+
TO247
8635
一级代理优势现货,全新正品直营店

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