C4D10120E价格
参考价格：￥49.9168
型号：C4D10120E 品牌：Cree 备注：这里有C4D10120E多少钱，2026年最近7天走势，今日出价，今日竞价，C4D10120E批发/采购报价，C4D10120E行情走势销售排行榜，C4D10120E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
C4D10120E | Silicon Carbide Schottky Diode Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET | CREE 科锐 |   | |
C4D10120E | Silicon Carbide Schottky Diode FEATURES · High surge current capability · Positive Temperature Coefficient · Extremely Fast Switching · No reverse recovery APPLICATIONS · Solar inverter · Power factor correction · Switch mode power supply | ISC 无锡固电 | | |
C4D10120E | 丝印代码：C4D10120；Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Lo | WOLFSPEED | | |
C4D10120E | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 1.2KV 10A TO252-2 分立半导体产品 二极管 - 整流器 - 单 | WOLFSPEED | | |
C4D10120E | 1200 V Discrete Silicon Carbide Schottky Diodes | WOLFSPEED | | |
Silicon Carbide Schottky Diode 文件：901.84 Kbytes Page：6 Pages | CREE 科锐 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE SCHOTTKY 1.2KV 33A TO252-2 分立半导体产品 二极管 - 整流器 - 单 | WOLFSPEED | | ||
Silicon Carbide Schottky Diode Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET | CREE 科锐 | | ||
4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m | WOLFSPEED | | ||
丝印代码：C4D10120；Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink | WOLFSPEED | | ||
4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m | WOLFSPEED | |
C4D10120E产品属性
- 类型
描述
- Current Rating：
10 A
- Package：
TO-252-2
- Technology：
C4D
- Maximum Continuous Current (IF)：
16 A @ 135°C
- Total Capacitive Charge (QC (typ))：
52 nC per leg
- Total Power Dissipation (PTOT)：
170 W @ 25°C
- Lead-frame materials：
100% matte tin solder finish over a copper lead-frame
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
23+ |
TO252 |
7000 |
||||
Wolfspeed |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
CREE/科锐 |
25+ |
N/A |
20000 |
只做原装,只有原装。 |
|||
CREE/科锐 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
CREE/科锐 |
22+ |
TO252-2 |
12245 |
现货,原厂原装假一罚十! |
|||
CREE(科锐) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
CREE全系列可接受订货 |
26+ |
NA |
9808 |
CREE进口代理原装优势供应全系列可订货QQ1304306553 |
|||
CREE/科锐 |
25+ |
TO252 |
15000 |
本公司 只做全新原装正品 |
|||
Cree/Wolfspeed |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
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C4D10120E规格书下载地址
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DdatasheetPDF页码索引
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