N-Channel Enhancement Mode

Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefts • Higher System

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • I

1200V SIC POWER MOSFET

Positive temperature characteristics, easy to parallel. Low on-resistance Typ. RDS(on) = 175mΩ . Fast switching speed and low switching losses. Very fast and robust intrinsic body diode. Process of non-bright Tin electroplatin

1200V SIC POWER MOSFET

• Positive temperature characteristics, easy to parallel. • Low on-resistance Typ. RDS(on) = 175mΩ . • Fast switching speed and low switching losses. • Very fast and robust intrinsic body diode. • Process of non-bright Tin electroplatin

1200V SIC POWER MOSFET

• Positive temperature characteristics, easy to parallel. • Low on-resistance Typ. RDS(on) = 175mΩ . • Fast switching speed and low switching losses. • Very fast and robust intrinsic body diode. • Process of non-bright Tin electroplatin