位置：首页 > IC中文资料第9961页 > C2106
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Hook-Up Wire, UL 1015, CSA TEW, Gauge Size (AWG): 12, Conductor/Strands: 65/30 文件：73.66 Kbytes Page：3 Pages | GENERAL 通用电缆 |   | ||
Hook-Up Wire, UL 1015, CSA TEW, Gauge Size (AWG): 12, Conductor/Strands: 65/30 文件：73.66 Kbytes Page：3 Pages | GENERAL 通用电缆 | | ||
Hook-Up Wire, UL 1015, CSA TEW, Gauge Size (AWG): 12, Conductor/Strands: 65/30 文件：73.66 Kbytes Page：3 Pages | GENERAL 通用电缆 | | ||
Hook-Up Wire, UL 1015, CSA TEW, Gauge Size (AWG): 12, Conductor/Strands: 65/30 文件：73.66 Kbytes Page：3 Pages | GENERAL 通用电缆 | | ||
HOOK-UP WIRE 文件：80.12 Kbytes Page：1 Pages | GENERAL 通用电缆 | | ||
包装：线轴 描述：HOOK-UP STRND 12AWG WHITE 1000' 电缆，电线 单芯电缆（连接线） | PRYSMIAN 普睿司 | | ||
包装：线轴 描述：HOOK-UP STRND 12AWG RED 1000' 电缆，电线 单芯电缆（连接线） | PRYSMIAN 普睿司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda | SUTEX | |
C2106产品属性
- 类型
描述
- 型号
C2106
- 制造商
GENERAL
- 制造商全称
General Cable Technologies Corporation
- 功能描述
Hook-Up Wire, UL 1015, CSA TEW, Gauge Size(AWG)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AMI |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
23+ |
DIP-24 |
27505 |
公司原装现货!主营品牌!可含税欢迎查询 |
||||
恩XP |
24+ |
350 |
|||||
AMI |
23+ |
PLCC44 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
AMI |
00+/01+ |
PLCC44 |
460 |
全新原装100真实现货供应 |
|||
AMIS |
24+ |
PLCC-84 |
4652 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
AMI |
25+ |
DIP24 |
500000 |
行业低价,代理渠道 |
|||
ALLTOP |
两年内 |
NA |
967 |
实单价格可谈 |
|||
C2107B-4 |
25+ |
22 |
22 |
||||
AMIS |
2023+ |
PLCC84 |
50000 |
原装现货 |
C2106规格书下载地址
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C1CB00002620,当天发货0755-82732291全新原装现货或门市自取.
2020-11-11C2012X5R1A225M-60毫安稳压电荷泵电压逆变器
TPS6040x是一个系列器件产生一个不受管制的负输出电压的输入电压范围从1.6 V至5.5 V的设备通常提供了5 V或3.3 V由于preregulated供应铁路宽输入电压范围，两个或三个镍镉，镍氢电池或碱性电池，以及一个锂离子电池动力的。只有三个外部1μF电容需要构建一个完整的电荷泵DC / DC逆变器。组装在5引脚SOT23封装，完整的转换器，可以建在一个50平方毫米的电路板面积。额外的电路板面积元件数量的减少是通过取代肖特基二极管，通常需要启动成积体电路的负荷。TPS6040x能够以一个典型的转换效率，更大的一个最大输出电流60毫安在很宽的输出电流范围内超过90％。 3与20千赫，5
2012-12-28
DdatasheetPDF页码索引
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