Phase Control SCR 150 Amperes Average 1600 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti

Phase Control SCR 150 Amperes Avg 100-1300 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti

High Power Silicon Controlled Rectifier

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150A PHASE CONTROL SCR

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封装/外壳：TO-209AB，TO-93-4，接线柱 包装：散装 描述：SCR 600V 235A TO93 分立半导体产品 晶闸管 - SCR

C180MX500,Discrete Thyristors,190 Amperes, 600 Volts,Phase Control SCR / Inverter Grade SCR,Main Applications - battery chargers, flexible AC transmissions, induction heating, medical equipment, medium volume inverters, motor controls, power supplies,

•If the product shown here does not fit your exact requirements, other options may be available. Please go to “Contact Us” or call customer service @ 724-925-7272 Option 1.;

封装/外壳：TO-209AB，TO-93-4，接线柱 包装：散装 描述：SCR 600V 300A TO93 分立半导体产品 晶闸管 - SCR

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und