丝印代码：C105；EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

丝印代码：C105；Single 3-Input Positive-NAND Gate

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max t pd of 3.8 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Supports Live Inser

丝印代码：C105；Single 3-Input Positive-NAND Gate

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max t pd of 3.8 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Supports Live Inser

Operate on the main AC line 100V and 200V

Operate on the main AC line 100V and 200V

组合保险丝

方式: 平铺/侧挂两款式\n˙通过将多路保险丝集成在一起,减少零部件使用量,实现轻量化\n˙通过与蓄电池接头直接连接,减少蓄电池导线\n˙平铺适用于欧洲标准蓄电池\n˙侧挂适用于日本标准蓄电池\n部分展示,更多组合设计款式,请进一步联系\n

可变增益，高增益下可稳定探测

该器件除了包含一个APD、电流-电压转化电路和高电压供电电路之外，还包含一个可基于内置热敏电阻来完成温度补偿的微控制器。由于微控制器包含与APD温度特性相匹配的系数，因此该APD即使在高增益下，也可以进行宽温度范围、高增益稳定性的工作。其增益可以通过电路板上的选择开关或者PC发出指令进行调节。 \n-增益随温度的波动：最大±5%（M=250, Ta=0 to +40 ℃）\n-调整增益简单：开关调节或者PC指令调节\n-便于使用：±5 V供电\n-尺寸小，重量轻;

HelioProtection® HP15NH Photovoltaic fuse-links gPV 1500VDC

FEATURES & BENEFITS • Global acceptance • Low fault current interrupting capability • Temperature cycle withstand capability • Durable construction for enhanced system longevity • High efficiency with low power losses • Available in 3 versions: plain blade, direct mounted, direct mounted wit

NPN SILICON TRANSISTOR

882 Transistor Chip Manual █ Introduction to the chip Chip size: 4 inches (100mm) Chip code: C105AJ-00 Chip thickness: 240±20µm Die size: 1050×1050µm 2 Welding position size: B pole 230×230µm 2; E pole 170×170µm 2 Electrode metal: aluminum Back metal: gold

NPN SILICON TRANSISTOR

965 Transistor Chip Manual █ Introduction to the chip Chip size: 4 inches (100mm) Chip code: C105BJ-01 Chip thickness: 240±20µm Die size: 1050×1050µm 2 Welding position size: B pole 280×345µm 2; E pole 275×415µm 2 Electrode metal: aluminum Back metal: gold

C10507-11 series C10751 series

文件：898.1 Kbytes Page：9 Pages

Variable gain and stable detection even at high gains

文件：591.8 Kbytes Page：5 Pages

Variable gain and stable detection even at high gains

Variable gain, stable detection even at high gain

文件：510.23 Kbytes Page：7 Pages

SCAN BLOCK

文件：390.65 Kbytes Page：4 Pages

Rose Assembly

文件：244.47 Kbytes Page：3 Pages

Rose Assembly

文件：307.87 Kbytes Page：3 Pages

Rose Assembly

文件：747.88 Kbytes Page：11 Pages

Rose Assembly

文件：399.02 Kbytes Page：3 Pages

25 x 25 mm lens with ~95째 x 20째 diffused oval beam

文件：2.08686 Mbytes Page：4 Pages

包装：散装 描述：LENS CLEAR 12/16DEG SPOT ADH 光电器件 光学 - 镜头

~35째 wide beam

文件：2.88883 Mbytes Page：4 Pages

包装：托盘 描述：LENS CLR 36-38DEG WIDE ADHESIVE 光电器件 光学 - 镜头

~55째 wide beam

文件：2.26501 Mbytes Page：4 Pages

Tampa series

文件：242.5 Kbytes Page：4 Pages

~20째 spot beam

文件：2.48577 Mbytes Page：4 Pages

~30째 medium beam

文件：3.50282 Mbytes Page：4 Pages

~55째 wide beam

文件：1.30895 Mbytes Page：5 Pages

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Hybrid Power Module

The RF Line VHF Power Amplifier The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. • Specified 7.5 Volt Characteristics: RF Input Power — 1.0 mW (0

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP