丝印代码：C105；EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

General Purpose BRT, TO-92, 50V, 0.1A

• With Built-in Bias Resistors\n• Simplify circuit design\n• Reduce a Quantity of Parts and Manufacturing Process\n• High Packing Density.;

EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APLLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

丝印代码：NE；EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

Digital Transistor

Features © Epitaxial planar die construction © Builtin biasing resistors (Ry: 22k0, Ry: 47k0) © Also available in lead free version ® RoHS compliant with Halogen-free:

General Purpose BRT, SOT-23, 50V, 0.1A

• With Built-in bias resistors\n• Simplify circuit design.\n• Reduce a quantity of Parts and Manufacturing Process;

数字三极管

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Hybrid Power Module

The RF Line VHF Power Amplifier The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. • Specified 7.5 Volt Characteristics: RF Input Power — 1.0 mW (0

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP