Quadruple ESD transient voltage suppressor

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Quadruple ESD transient voltage suppressor

Quadruple ESD transient voltage suppressor

Quadruple ESD transient voltage suppressor

FEATURES • ESD rating >8 kV, according to IEC1000-4-2 • SOT353 (SC-88A) surface mount package • Common anode configuration. APPLICATIONS • Computers and peripherals • Audio and video equipment • Communication systems. DESCRIPTION Monolithic transient voltage suppressor diode in a five lea

Quadruple ESD transient voltage suppressor

FEATURES • ESD rating >8 kV, according to IEC1000-4-2 • SOT353 (SC-88A) surface mount package • Common anode configuration. APPLICATIONS • Computers and peripherals • Audio and video equipment • Communication systems. DESCRIPTION Monolithic transient voltage suppressor diode in a five

Quadruple low capacitance ESD suppressor

FEATURES • Low diode capacitance • Low leakage current • SOT353 (SC-88A) surface mount package • Common anode configuration. APPLICATIONS • Communication systems • Computers and peripherals • Audio and video equipment. DESCRIPTION Monolithic transient voltage suppressor diode in a five l

Quadruple low capacitance ESD suppressor

FEATURES • Low diode capacitance • Low leakage current • SOT353 (SC-88A) surface mount package • Common anode configuration. APPLICATIONS • Communication systems • Computers and peripherals • Audio and video equipment. DESCRIPTION Monolithic transient voltage suppressor diode in a fi

Quadruple ESD transient voltage suppressor

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Quadruple ESD transient voltage suppressor

Quadruple ESD transient voltage suppressor

Quadruple low capacitance ESD suppressor

Quadruple low capacitance ESD suppressor

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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