丝印代码：BY253G；General Purpose Rectifier BY251G Through BY255G

Features High efficiency High current capabilty High reliabity High surge current capability Low power oss Glass passivated chip junction Solder dip 275 °C max. 7 s, per JESD 22-8106

3A, 200V - 800V Glass Passivated Rectifier

FEATURES ● High efficiency, Low VF ● High current capability ● High reliability ● High surge current capability ● Low power loss ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power sup

GLASS PASSIVATED SILICON RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

GLASS PASSIVATED GENERAL PURPOSE RECTIFIERS

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

GLASS PASSIVATED SILICON RECTIFIER

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

General Purpose Rectifier

■ Features ● Io 3A ● VRRM 200V-1300V ● High surge current capability ■ Applications ● Rectifier

普通整流二极管

Glass Passivated Junction Plastic Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for d

Glass Passivated Junction Plastic Rectifiers

Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Capable of meeting environmental standards of MIL-S-19500 • 3.0 Ampere operation at TA=55°C with no therm

Glass Passivated Junction Plastic Rectifier

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包装：卷带（TR） 描述：DIODE GEN PURPOSE DO201AD 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-201AD，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 600V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)