isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

Enhancement mode

Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 3.3 Ω ■ AVALANCHE RUGGEDNESS TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPE

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

Drain source voltage

FAST POWER MOS TRANSISTOR

SIPMOS Power Transistor (N channel Enhancement mode)

SIPMOS ® Power Transistor • N channel • Enhancement mode

N-Channel Enhancement Mode Power MOS Transistor

N-Channel Enhancement Mode Power MOS Transistor ● Typical RDS(on)=2.5 Ω ● AVALANCHE RUGGED TECHNOLOGY ● 100 AVALANCHE TESTED ● REPETITIVE AVALANCHE DATA AT 100℃ ● LOW INPUT CAPACITANCE ● LOW GATE CHARGE ● APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ● HIGH CURRENT, HIGH SPEED SWITCH

N-Channel Enhancement Mode Power MOS Transistor

N-Channel Enhancement Mode Power MOS Transistor ● Typical RDS(on)=2.5 Ω ● AVALANCHE RUGGED TECHNOLOGY ● 100 AVALANCHE TESTED ● REPETITIVE AVALANCHE DATA AT 100℃ ● LOW INPUT CAPACITANCE ● LOW GATE CHARGE ● APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ● HIGH CURRENT, HIGH SPEED SWITCH

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 3.3 Ω ■ AVALANCHE RUGGEDNESS TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPE

Easy driver for cost effective application

DESCRIPTION • High speed switching • Low RDS(ON) • Easy driver for cost effective application APPLICATIONS • Automotive power actuator drivers • Motor controls • DC-DC converters

SIPMOS Power Transistor (N channel Enhancement mode)

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) ISOWATT220