N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 3.3 Ω ■ AVALANCHE RUGGEDNESS TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPE

Easy driver for cost effective application

DESCRIPTION • High speed switching • Low RDS(ON) • Easy driver for cost effective application APPLICATIONS • Automotive power actuator drivers • Motor controls • DC-DC converters

Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) ISOWATT220