位置：首页 > IC中文资料第618页 > BUZ80A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ80A | N-Channel Enhancement Mode Power MOS Transistor N-ChannelEnhancementModePowerMOSTransistor ●TypicalRDS(on)=2.5Ω ●AVALANCHERUGGEDTECHNOLOGY ●100AVALANCHETESTED ●REPETITIVEAVALANCHEDATAAT100℃ ●LOWINPUTCAPACITANCE ●LOWGATECHARGE ●APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ●HIGHCURRENT,HIGHSPEEDSWITCH | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  |   |
BUZ80A | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=3.0A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive, | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
BUZ80A | SIPMOS Power Transistor (N channel Enhancement mode) SIPMOS®PowerTransistor •Nchannel •Enhancementmode | SIEMENS Siemens Ltd |  | |
BUZ80A | Drain source voltage FASTPOWERMOSTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
BUZ80A | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
N-Channel Enhancement Mode Power MOS Transistor N-ChannelEnhancementModePowerMOSTransistor ●TypicalRDS(on)=2.5Ω ●AVALANCHERUGGEDTECHNOLOGY ●100AVALANCHETESTED ●REPETITIVEAVALANCHEDATAAT100℃ ●LOWINPUTCAPACITANCE ●LOWGATECHARGE ●APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ●HIGHCURRENT,HIGHSPEEDSWITCH | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=2.4A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive, | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
BUZ80A产品属性
- 类型
描述
- 型号
BUZ80A
- 功能描述
MOSFET N-CH 800V 3.6A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
SIPMOS®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON |
23+ |
TO220 |
1150 |
特价库存 |
|||
TH/韩国太虹 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
ST |
23+ |
TO-220 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
Infineon Technologies |
21+ |
TO2203 |
13880 |
公司只售原装,支持实单 |
|||
ST/意法 |
22+ |
TO-220 |
10000 |
绝对全新原装现货热卖 |
|||
SIE |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
||||
西门子 |
TO-220 |
10265 |
提供BOM表配单只做原装货值得信赖 |
||||
ST/意法 |
23+ |
NA/ |
13818 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
22+23+ |
TO-220 |
30163 |
绝对原装正品全新进口深圳现货 |
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