位置：首页 > IC中文资料第618页 > BUZ80A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ80A | N-Channel Enhancement Mode Power MOS Transistor N-Channel Enhancement Mode Power MOS Transistor ● Typical RDS(on)=2.5 Ω ● AVALANCHE RUGGED TECHNOLOGY ● 100 AVALANCHE TESTED ● REPETITIVE AVALANCHE DATA AT 100℃ ● LOW INPUT CAPACITANCE ● LOW GATE CHARGE ● APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ● HIGH CURRENT, HIGH SPEED SWITCH | ARTSCHIP |   | |
BUZ80A | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | |
BUZ80A | SIPMOS Power Transistor (N channel Enhancement mode) SIPMOS ® Power Transistor • N channel • Enhancement mode | SIEMENS 西门子 | | |
BUZ80A | Drain source voltage FAST POWER MOS TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BUZ80A | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
BUZ80A | SIPMOS Power Transistor (N channel Enhancement mode) | Infineon 英飞凌 | | |
N-Channel Enhancement Mode Power MOS Transistor N-Channel Enhancement Mode Power MOS Transistor ● Typical RDS(on)=2.5 Ω ● AVALANCHE RUGGED TECHNOLOGY ● 100 AVALANCHE TESTED ● REPETITIVE AVALANCHE DATA AT 100℃ ● LOW INPUT CAPACITANCE ● LOW GATE CHARGE ● APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ● HIGH CURRENT, HIGH SPEED SWITCH | ARTSCHIP | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 2.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | |
BUZ80A产品属性
- 类型
描述
- 型号
BUZ80A
- 功能描述
MOSFET N-CH 800V 3.6A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
SIPMOS®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
13818 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
|||
23+ |
TO-220 |
1 |
|||||
INFINEON |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
INF |
23+ |
TO-220 |
49072 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ST |
25+23+ |
TO-220 |
30163 |
绝对原装正品全新进口深圳现货 |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
24+ |
P-TO220-3-1 |
8866 |
||||
INFINEON |
25+ |
18 |
公司优势库存 热卖中! |
BUZ80A规格书下载地址
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