N-Channel Enhancement Mode Power MOS Transistor

N-Channel Enhancement Mode Power MOS Transistor ● Typical RDS(on)=2.5 Ω ● AVALANCHE RUGGED TECHNOLOGY ● 100 AVALANCHE TESTED ● REPETITIVE AVALANCHE DATA AT 100℃ ● LOW INPUT CAPACITANCE ● LOW GATE CHARGE ● APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ● HIGH CURRENT, HIGH SPEED SWITCH

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,