位置：首页 > IC中文资料第3908页 > BUZ34
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ34 | main ratings
| SIEMENS 西门子 |   | |
BUZ34 | SOA is Power Dissipation Limited DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) • SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requir | ISC 无锡固电 | | |
BUZ34 | main ratings | Infineon 英飞凌 | | |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Ultra low on-resistance • 175°C operating temperature | SIEMENS 西门子 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 41A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.03Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
main ratings
| SIEMENS 西门子 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 32A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) | Infineon 英飞凌 | | ||
SIPMOS ® Power Transistor | Infineon 英飞凌 | |
BUZ34产品属性
- 类型
描述
- 型号
BUZ34
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET N TO-218
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SIEMENS西门子 |
25+ |
管3P |
18000 |
原厂直接发货进口原装 |
|||
TO-3P |
98+ |
595 |
全新原装进口自己库存优势 |
||||
Siemens/西门子 |
1824+ |
TO218 |
4000 |
原装现货专业代理,可以代拷程序 |
|||
SIEMENS |
25+ |
T0247 |
863 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SIEMENS |
24+ |
T0247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INF |
23+ |
65480 |
|||||
SIEMENS |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
SIEMENS |
23+ |
T0247 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
INFINEON |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
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BUZ34规格书下载地址
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