位置：首页 > IC中文资料第3908页 > BUZ34
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ34 | main ratings
| SIEMENS 西门子 |   | |
BUZ34 | SOA is Power Dissipation Limited DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) • SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requir | ISC 无锡固电 | | |
BUZ34 | main ratings | Infineon 英飞凌 | | |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Ultra low on-resistance • 175°C operating temperature | SIEMENS 西门子 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 41A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.03Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
main ratings
| SIEMENS 西门子 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 32A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) | Infineon 英飞凌 | | ||
SIPMOS ® Power Transistor | Infineon 英飞凌 | |
BUZ34产品属性
- 类型
描述
- 型号
BUZ34
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET N TO-218
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
25+ |
TO-218 |
68 |
原装正品,假一罚十! |
|||
SIEMENS |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
Infineon |
2025+ |
TO-218AA |
5425 |
全新原厂原装产品、公司现货销售 |
|||
ST |
2511 |
TO3P |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
25+ |
TO3P |
16900 |
原装，请咨询 |
|||
INFINEON/英飞凌 |
2450+ |
TO-3P |
9850 |
只做原装正品现货或订货假一赔十! |
|||
SIEMENS |
24+ |
T0247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
23+ |
TO-218 |
20000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INFINEON |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
|||
SIEMENS/西门子 |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
BUZ34规格书下载地址
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DdatasheetPDF页码索引
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