SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 41A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIPMOS® Power Transistor

SIPMOS® Power Transistor\n\n• N channel\n• Enhancement mode\n• Avalanche-rated

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR345CTD series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse surge ca

Varactor Diode for AM Low-Voltage Electronic Tuning

Sillicon Diffused Junction Type Features • Twin type varactor diode for low-voltage AM electronic tuning applications. • Low operating voltage (≤6.5V). • High Q. • Possible to offer the SVC345 devices in a tape reel packaging. • Surface mount type.

Negative Three Amp Regulator

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LOW POWER, SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier ??Series

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