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BUZ31价格
参考价格：￥5.5592
型号：BUZ31H3045A 品牌：Infineon 备注：这里有BUZ31多少钱，2025年最近7天走势，今日出价，今日竞价，BUZ31批发/采购报价，BUZ31行情走势销售排行榜，BUZ31报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ31 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 |   | |
BUZ31 | SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | |
BUZ31 | Enhancement mode SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BUZ31 | High current capability DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) • High current capability • 175℃ operating temperature APPLICATIONS • High current , high speed switching • Solenoid and relay drivers • DC-DC & DC-AC converters | ISC 无锡固电 | | |
BUZ31 | POWER MOS TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. | COMSET | | |
BUZ31 | SIPMOS® Power Transistor | Infineon 英飞凌 | | |
SIPMOS Power Transistor (N channel Enhancement mode) SIPMOS ® Power Transistor • N channel • Enhancement mode | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode) • N channel • Enhancement mode | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
SIPMOS 짰 Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | Infineon 英飞凌 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
MOSFET N-CH 200V 14.5A TO262-3 | Infineon 英飞凌 | | ||
MOSFET N-CH 200V 14.5A TO263 | Infineon 英飞凌 | |
BUZ31产品属性
- 类型
描述
- 型号
BUZ31
- 功能描述
MOSFET N-CH 200V 14.5A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEO |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
1000 |
只做原厂渠道 可追溯货源 |
|||
HARRIS |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ADI |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
SIEMENS/西门子 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
HARRIS |
24+ |
700 |
|||||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON |
118 |
TO-220-3 |
240 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
24+ |
0118 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
BUZ31规格书下载地址
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DdatasheetPDF页码索引
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