BUZ31价格
参考价格：￥5.5592
型号：BUZ31H3045A 品牌：Infineon 备注：这里有BUZ31多少钱，2026年最近7天走势，今日出价，今日竞价，BUZ31批发/采购报价，BUZ31行情走势销售排行榜，BUZ31报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ31 | SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | INFINEON 英飞凌 |   | |
BUZ31 | POWER MOS TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. | COMSET | | |
BUZ31 | High current capability DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) • High current capability • 175℃ operating temperature APPLICATIONS • High current , high speed switching • Solenoid and relay drivers • DC-DC & DC-AC converters | ISC 无锡固电 | | |
BUZ31 | SIPMOS® Power Transistor SIPMOS® Power Transistor• N channel\n• Enhancement mode\n• Avalanche-rated | INFINEON 英飞凌 | | |
BUZ31 | Enhancement mode SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BUZ31 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | |
SIPMOS Power Transistor (N channel Enhancement mode) SIPMOS ® Power Transistor • N channel • Enhancement mode | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode) • N channel • Enhancement mode | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive | ISC 无锡固电 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | INFINEON 英飞凌 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | INFINEON 英飞凌 | | ||
SIPMOS 짰 Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | INFINEON 英飞凌 | | ||
isc N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | INFINEON 英飞凌 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | INFINEON 英飞凌 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | INFINEON 英飞凌 | | ||
MOSFET N-CH 200V 14.5A TO262-3 | INFINEON 英飞凌 | | ||
MOSFET N-CH 200V 14.5A TO263 | INFINEON 英飞凌 | |
BUZ31产品属性
- 类型
描述
- Package ：
I2PAK (TO-262)
- VDS max：
200.0V
- RDS (on) max：
200.0mΩ
- Polarity ：
N
- ID max：
14.5A
- Ptot max：
95.0W
- IDpuls max：
58.0A
- VGS(th) min max：
2.1V 4.0V
- Rth ：
1.32K/W
- Ciss ：
840.0pF
- Coss ：
180.0pF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+/25+ |
700 |
原装正品现货库存价优 |
||||
INFINEON |
26+ |
TO-3P |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
32000 |
INFINEON/英飞凌全新特价BUZ31L即刻询购立享优惠#长期有货 |
|||
SIEMENS |
25+ |
TO-220 |
70000 |
专做原装正品,假一罚百! |
|||
INFINE0N |
21+ |
I2PAK (TO-262) |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
INFINEON/英飞凌 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
INFINEON |
23+ |
TO-220 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Infineon(英飞凌) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON |
25+23+ |
TO-220-3 |
19825 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON |
24+ |
P-TO263-3-2 |
8866 |
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BUZ31规格书下载地址
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DdatasheetPDF页码索引
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