isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

SIPMOS Power Transistor (N channel Enhancement mode)

SIPMOS ® Power Transistor • N channel • Enhancement mode

SIPMOS Power Transistor (N channel Enhancement mode)

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Unifor

POWER RECTIFIERS(3.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST RECIFITERS 3.0 AMPERES 500 -- 1000 VOLTS

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 70 -100 VOLTS

Voltage Follower

文件：348.91 Kbytes Page：16 Pages

Voltage Follower

文件：348.91 Kbytes Page：16 Pages