型号 功能描述 生产厂家 企业 LOGO 操作
BUZ10

N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATO

STMICROELECTRONICS

意法半导体

BUZ10

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

BUZ10

SIPMOS 짰 Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BUZ10

High current capability

DESCRIPTION • Typical RDS(on) = 0.06Ω • High current capability • 175℃ operating temperature APPLICATIONS • High current , high speed switching • Solenoid and relay drivers • DC-DC & DC-AC converters

ISC

无锡固电

BUZ10

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ10

N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

STMICROELECTRONICS

意法半导体

BUZ10

Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220

NJS

BUZ10

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

• N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

• N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dtrated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

Features •N channel •Enhancement mode •Avalanche rated •dv/dt rated • 175˚C operating temperature

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated VDS : 55 V ID : 7.4 A RDS(on) : 0.023 Ω

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

• N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

• N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dtrated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

• N channel • Enhancement mode • Avalanche-rated • dv/dtrated • 175°C operating temperature

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

• N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 42A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.023Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)

• N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

SIPMOS Power Transistor

Features •N channel •Enhancement mode •Avalanche rated •dv/dtrated •175 ˚C operating temperature

Infineon

英飞凌

SIPMOS Power Transistor

Features •N channel •Enhancement mode •Avalanche rated •dv/dtrated •175 ˚C operating temperature

Infineon

英飞凌

SIPMOS Power Transistor

Features •N channel •Enhancement mode •Avalanche rated •dv/dtrated •175 ˚C operating temperature

Infineon

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

• N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)

• N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature)

• N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

• N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)

• N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dtrated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature)

• N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175째C operating temperature)

• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIEMENS

西门子

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

SIEMENS

西门子

SIPMOS 짰 Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

Ultra low on-resistance

文件:66.01 Kbytes Page:2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

文件:123.09 Kbytes Page:8 Pages

SIEMENS

西门子

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Ultra low on-resistance

文件:65.99 Kbytes Page:2 Pages

ISC

无锡固电

Easy driver for cost effective application

文件:65.7 Kbytes Page:2 Pages

ISC

无锡固电

BUZ10产品属性

  • 类型

    描述

  • 型号

    BUZ10

  • 功能描述

    MOSFET N-Ch 50 Volt 23 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-1 10:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
西门子
06+
TO-220
2000
全新原装 绝对有货
ST
25+
TO-220
16900
原装,请咨询
Infineon(英飞凌)
24+
TO-263
8498
支持大陆交货,美金交易。原装现货库存。
24+
1100
INFINEON/英飞凌
2405+
TO-263
4475
只做原装正品渠道订货
FSC
24+
TO-220
5000
只做原装正品现货 欢迎来电查询15919825718
ST/意法
17+
TO-220
31518
原装正品 可含税交易
XI.M.Z
16+
TO-220
10000
全新原装现货
INFINEON/英飞凌
24+
TO 220
160333
明嘉莱只做原装正品现货
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货

BUZ10数据表相关新闻