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型号	功能描述	生产厂家企业	LOGO
BUZ10	N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATO	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUZ10	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated	SIEMENS 西门子	SIEMENS
BUZ10	SIPMOS 짰 Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BUZ10	High current capability DESCRIPTION • Typical RDS(on) = 0.06Ω • High current capability • 175℃ operating temperature APPLICATIONS • High current , high speed switching • Solenoid and relay drivers • DC-DC & DC-AC converters	ISC 无锡固电	ISC
BUZ10	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BUZ10	N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BUZ10	Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220	ETC 知名厂家	ETC
BUZ10	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)	Infineon 英飞凌	Infineon
BUZ100	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ100L	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dtrated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ100S	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) Features •N channel •Enhancement mode •Avalanche rated •dv/dt rated • 175˚C operating temperature	SIEMENS 西门子	SIEMENS
BUZ100SL	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available	SIEMENS 西门子	SIEMENS
BUZ100SL-4	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated VDS : 55 V ID : 7.4 A RDS(on) : 0.023 Ω	SIEMENS 西门子	SIEMENS
BUZ101	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ101	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
BUZ101L	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dtrated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ101S	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • 175°C operating temperature	SIEMENS 西门子	SIEMENS
BUZ101SL	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available	SIEMENS 西门子	SIEMENS
BUZ101SL-4	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated	SIEMENS 西门子	SIEMENS
BUZ101SLE3045A	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available	SIEMENS 西门子	SIEMENS
BUZ102	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ102	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 42A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.023Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,	ISC 无锡固电	ISC
BUZ102AL	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ102S	SIPMOS Power Transistor Features •N channel •Enhancement mode •Avalanche rated •dv/dtrated •175 ˚C operating temperature	Infineon 英飞凌	Infineon
BUZ102SE3045	SIPMOS Power Transistor Features •N channel •Enhancement mode •Avalanche rated •dv/dtrated •175 ˚C operating temperature	Infineon 英飞凌	Infineon
BUZ102SE3045A	SIPMOS Power Transistor Features •N channel •Enhancement mode •Avalanche rated •dv/dtrated •175 ˚C operating temperature	Infineon 英飞凌	Infineon
BUZ102SL	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available	SIEMENS 西门子	SIEMENS
BUZ102SL-4	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated	SIEMENS 西门子	SIEMENS
BUZ103	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ103	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,	ISC 无锡固电	ISC
BUZ103AL	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ103S	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature) • N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available	SIEMENS 西门子	SIEMENS
BUZ103SL	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available	SIEMENS 西门子	SIEMENS
BUZ103SL-4	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated	SIEMENS 西门子	SIEMENS
BUZ104	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ104L	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dtrated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available	SIEMENS 西门子	SIEMENS
BUZ104S	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature) • N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available	SIEMENS 西门子	SIEMENS
BUZ104SL	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175째C operating temperature) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available	SIEMENS 西门子	SIEMENS
BUZ104SL-4	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated	SIEMENS 西门子	SIEMENS
BUZ10L	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level	SIEMENS 西门子	SIEMENS
BUZ10L	SIPMOS 짰 Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BUZ10L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,	ISC 无锡固电	ISC
BUZ10S2	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated	SIEMENS 西门子	SIEMENS
BUZ10S2	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,	ISC 无锡固电	ISC
BUZ100	Ultra low on-resistance 文件：66.01 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BUZ102S	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) 文件：123.09 Kbytes Page：8 Pages	SIEMENS 西门子	SIEMENS
BUZ103	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BUZ104	Ultra low on-resistance 文件：65.99 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BUZ10A	Easy driver for cost effective application 文件：65.7 Kbytes Page：2 Pages	ISC 无锡固电	ISC

BUZ10产品属性

类型
描述
型号
BUZ10
功能描述
MOSFET N-Ch 50 Volt 23 Amp
RoHS
否
制造商
STMicroelectronics
晶体管极性
N-Channel
汲极/源极击穿电压
650 V
闸/源击穿电压
25 V
漏极连续电流
130 A 电阻汲极/源极
RDS（导通）
0.014 Ohms
配置
Single
安装风格
Through Hole
封装/箱体
Max247
封装
Tube

BUZ10供应商更多...

更新时间：2025-12-25 8:40:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市诺美思科技有限公司	BUZ102SL	恩XP		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市英科美电子有限公司	BUZ102SL	INFINEON/英飞凌	2223+	TO-263	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市胜彬电子有限公司	BUZ104SL-4	SIEMENS	22+	SOP28	8000	原装正品支持实单	询价
深圳市恒创达实业有限公司	BUZ10S	SIEMENS	17+	TO-220	6200		询价
深圳诚思涵科技有限公司	BUZ102	Intineon	18+	TO-220	85600	保证进口原装可开17%增值税发票	询价
深圳瞄钧科技有限公司	BUZ102SL	INFINEON	24+	SOT263	89000	特价特价100原装长期供货.	询价
深圳市卓越微芯电子有限公司	BUZ10	ST	25+	TO-220	115	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市明嘉莱科技有限公司	BUZ101MOS(场效应管)	INFINEON/英飞凌	24+	TO 220	160333	明嘉莱只做原装正品现货	询价
深圳市弘为电子有限公司	BUZ10	ST	24+	原厂封装	4000	原装现货假一罚十	询价
深圳市华来深电子有限公司	BUZ103E3045A	INFINE0N	23+	TO-263	11846	一级代理商现货批发,原装正品,假一罚十	询价

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BUSSMANN原装现货DR127-102-R固定电感器
深圳市大唐盛世半导体有限公司手机：17727572380 。电话：0755-83226739 Q Q:626839837。微信号：15096137729
2019-12-17
BUZ341，BUZ350，BUZ41A，BUZ42，BUZ60，BUZ72A，BUZ73L，BUZ74A，BUZ76A，BUZ77B，BY101，CWM60FN，D1FL20U/4063，EASY256EV1.1，EASY534，EASY7001MII，EASY-C161U-BOARD，PEB2023TV1.1G，PEB20256EV2.1，PEB2025
BUZ341，BUZ350，BUZ41A，BUZ42，BUZ60，BUZ72A，BUZ73L，BUZ74A，BUZ76A，BUZ77B，BY101，CWM60FN，D1FL20U/4063，EASY256EV1.1，EASY534，EASY7001MII，EASY-C161U-BOARD，PEB2023TV1.1G，PEB20256EV2.1，PEB2025
2019-12-16
Bussmann工业与电气保险丝LPS-RK-100SP原装现货
深圳市大唐盛世半导体有限公司手机：17727572380 。电话：0755-83226739 Q Q:626839837。微信号：15096137729
2019-12-14
BUSSMANN原装现货BK1/TDC180-10A特种保险丝
深圳市大唐盛世半导体有限公司手机：17727572380 。电话：0755-83226739 Q Q:626839837。微信号：15096137729
2019-12-12
BV03CTVS热卖产品质量保证
BV03CTVS热卖产品质量保证
2019-8-29

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BUZ10产品属性

BUZ10供应商更多...

BUZ10芯片相关品牌

BUZ10规格书下载地址

BUZ10参数引脚图相关

BUZ10数据表相关新闻

BV03C TVS/ESD静电保护二极管

BUSSMANN原装现货DR127-102-R固定电感器

BUZ341，BUZ350，BUZ41A，BUZ42，BUZ60，BUZ72A，BUZ73L，BUZ74A，BUZ76A，BUZ77B，BY101，CWM60FN，D1FL20U/4063，EASY256EV1.1，EASY534，EASY7001MII，EASY-C161U-BOARD，PEB2023TV1.1G，PEB20256EV2.1，PEB2025

Bussmann工业与电气保险丝LPS-RK-100SP原装现货

BUSSMANN原装现货BK1/TDC180-10A特种保险丝

BV03CTVS热卖产品质量保证

DdatasheetPDF页码索引