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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ10 | N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATO | STMICROELECTRONICS 意法半导体 | ||
BUZ10 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | ||
BUZ10 | SIPMOS 짰 Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
BUZ10 | High current capability DESCRIPTION • Typical RDS(on) = 0.06Ω • High current capability • 175℃ operating temperature APPLICATIONS • High current , high speed switching • Solenoid and relay drivers • DC-DC & DC-AC converters | ISC 无锡固电 | ||
BUZ10 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
BUZ10 | N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET | STMICROELECTRONICS 意法半导体 | ||
BUZ10 | Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 | NJS | ||
BUZ10 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Infineon 英飞凌 | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dtrated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) Features •N channel •Enhancement mode •Avalanche rated •dv/dt rated • 175˚C operating temperature | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated VDS : 55 V ID : 7.4 A RDS(on) : 0.023 Ω | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dtrated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • 175°C operating temperature | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 42A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.023Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor Features •N channel •Enhancement mode •Avalanche rated •dv/dtrated •175 ˚C operating temperature | Infineon 英飞凌 | |||
SIPMOS Power Transistor Features •N channel •Enhancement mode •Avalanche rated •dv/dtrated •175 ˚C operating temperature | Infineon 英飞凌 | |||
SIPMOS Power Transistor Features •N channel •Enhancement mode •Avalanche rated •dv/dtrated •175 ˚C operating temperature | Infineon 英飞凌 | |||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature) • N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) • N channel • Enhancement mode • Avalanche-rated • dv/dtrated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dtrated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature) • N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175째C operating temperature) • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available | SIEMENS 西门子 | |||
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dtrated | SIEMENS 西门子 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | SIEMENS 西门子 | |||
SIPMOS 짰 Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | |||
Ultra low on-resistance 文件:66.01 Kbytes Page:2 Pages | ISC 无锡固电 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) 文件:123.09 Kbytes Page:8 Pages | SIEMENS 西门子 | |||
SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Ultra low on-resistance 文件:65.99 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Easy driver for cost effective application 文件:65.7 Kbytes Page:2 Pages | ISC 无锡固电 |
BUZ10产品属性
- 类型
描述
- 型号
BUZ10
- 功能描述
MOSFET N-Ch 50 Volt 23 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
西门子 |
06+ |
TO-220 |
2000 |
全新原装 绝对有货 |
|||
ST |
25+ |
TO-220 |
16900 |
原装,请咨询 |
|||
Infineon(英飞凌) |
24+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
24+ |
1100 |
||||||
INFINEON/英飞凌 |
2405+ |
TO-263 |
4475 |
只做原装正品渠道订货 |
|||
FSC |
24+ |
TO-220 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ST/意法 |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
|||
XI.M.Z |
16+ |
TO-220 |
10000 |
全新原装现货 |
|||
INFINEON/英飞凌 |
24+ |
TO 220 |
160333 |
明嘉莱只做原装正品现货 |
|||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
BUZ10规格书下载地址
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DdatasheetPDF页码索引
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