SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

• N channel • Enhancement mode • Avalanche-rated • dv/dtrated • 175°C operating temperature

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/d trated • 175°C operating temperature • also in SMD available

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Smooth, high torque, roller ratchet handle

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Precision Wirewound Resistors

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